Zobrazeno 1 - 10
of 369
pro vyhledávání: '"Gogova, D."'
Autor:
Bafekry, A., Faraji, M., Fadlallah, M. M., Jappor, H. R., Karbasizadeh, S., Ghergherehchi, M., Gogova, D.
Publikováno v:
2022 J. Phys.: Condens. Matter 34 015001
In a very recent accomplishment, the two-dimensional form of Biphenylene network (BPN) has been successfully fabricated [Fan et al., Science, 372, 852-856 (2021)]. Motivated by this exciting experimental result on 2D layered BPN structure, herein we
Externí odkaz:
http://arxiv.org/abs/2105.14958
Autor:
Tetelbaum, D. I., Nikolskaya, A. A., Korolev, D. S., Belov, A. I., Trushin, V. N., Dudin, Yu. A., Mikhaylov, A. N., Pechnikov, A. I., Scheglov, M. P., Nikolaev, V. I., Gogova, D.
Gallium oxide with a corundum structure ({\alpha}-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{et
Externí odkaz:
http://arxiv.org/abs/2103.00317
Autor:
Bafekry, A., Faraji, M., Hoat, Do M., Fadlallah, M. M., Shahrokhi, M., Shojaei, F., Gogova, D., Ghergherehchi, M.
Publikováno v:
2021 J. Phys. D: Appl. Phys. 54 155303
Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal, electronic, opti
Externí odkaz:
http://arxiv.org/abs/2009.04267
Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering from metal targets in nitrogen atmosphere, and confirmed by transmiss
Externí odkaz:
http://arxiv.org/abs/2006.10995
Autor:
Zatsepin, D. A., Boukhvalov, D. W., Zatsepin, A. F., Kuznetsova, Yu. A., Gogova, D., Shur, V. Ya., Esin, A. A.
Gallium oxide epitaxial layers grown on native substrates and basal plane sapphire were characherized by X-ray phtotelectron and optical reflectance spectroscopies. The XPS electronic structure mapping was coupled to Density functional theory calcula
Externí odkaz:
http://arxiv.org/abs/1801.09451
Autor:
Fadlallah, Mohamed M., Gogova, D.
Publikováno v:
In Micro and Nanostructures August 2022 168
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Autor:
Bafekry, A., Faraji, M., Fadlallah, M.M., Abdolahzadeh Ziabari, A., Bagheri Khatibani, A., Feghhi, S.A.H., Ghergherehchi, M., Gogova, D.
Publikováno v:
In Applied Surface Science 30 October 2021 564
Autor:
Bafekry, A., Faraji, M., Fadlallah, Mohamed M., Bagheri Khatibani, A., abdolahzadeh Ziabari, A., Ghergherehchi, M., Nedaei, Sh., Shayesteh, S. Farjami, Gogova, D.
Publikováno v:
In Applied Surface Science 1 September 2021 559
Autor:
Schubert, M., Korlacki, R., Knight, S., Hofmann, T., Schöche, S., Darakchieva, V., Janzén, E., Monemar, B., Gogova, D., Thieu, Q. -T., Togashi, R., Murakami, H., Kumagai, Y., Goto, K., Kuramata, A., Yamakoshi, S., Higashiwaki, M.
Publikováno v:
Phys. Rev. B 93, 125209 (1-18) (2016)
We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and farinfrared active modes. We apply our model approach to monoclinic $\beta$-Ga$_2
Externí odkaz:
http://arxiv.org/abs/1512.08590