Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Goedele Potoms"'
Autor:
Mihaela Ioana Popovici, Amey M. Walke, Jasper Bizindavyi, Johan Meersschaut, Kaustuv Banerjee, Goedele Potoms, Kostantine Katcko, Geert Van den Bosch, Romain Delhougne, Gouri Sankar Kar, Jan Van Houdt
ispartof: ACS APPLIED ELECTRONIC MATERIALS vol:4 issue:4 pages:1823-1831 status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::155bbb4e3a747779ef7481e979ca16e8
https://lirias.kuleuven.be/handle/20.500.12942/698970
https://lirias.kuleuven.be/handle/20.500.12942/698970
Autor:
Mihaela Popovici, Simone Lavizzari, J. Van Houdt, Milan Pešić, Goedele Potoms, Guido Groeseneken, A. Subirats, K. Banerjee, Antonio Arreghini, L. Di Piazza, Farid Sebaai, S. R. C. McMitchell, Karine Florent
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
A vertical ferroelectric HfO 2 field effect transistor based on 3-D macaroni NAND architecture is reported for the first time. Up to 2 V memory window was obtained after the application of 100 ns program/erase pulses. Flash-like endurance of 104 cycl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455e8b9fa844fd83b67780217f47f967
https://doi.org/10.1109/iedm.2018.8614710
https://doi.org/10.1109/iedm.2018.8614710
Autor:
H. Oh, Goedele Potoms, Mihaela Popovici, Ludovic Goux, Johannes Meersschaut, Romain Delhougne, H. Hody, O. Richard, S. Van Elshocht, G. Sankar Kar, Attilio Belmonte
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We demonstrate the fabrication of strontium titanate (STO) based metal-insulator-metal (MIM) capacitors with very-high dielectric constant (k∼118) and low leakage of 10−7 A/cm2 at ±1V for a ∼11nm thick dielectric using Ru as bottom electrode (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a858590f0abfa8d8cd93a14705f6c49e
https://doi.org/10.1109/iedm.2018.8614673
https://doi.org/10.1109/iedm.2018.8614673
Autor:
Luca Di Piazza, Goedele Potoms, Karine Florent, Jan Van Houdt, Simone Lavizzari, Tom Raymaekers, Guido Groeseneken, Mihaela Popovici
Publikováno v:
ESSDERC
Ferroelectric hafnium oxide (HfO 2 )attracted a lot of interests since its discovery in 2007. Its scalability and CMOS compatibility are two advantages over conventional ferroelectric materials, favoring new device integration. Doped ferroelectric Hf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f02c8d2182893b7be89dea076c67c74
https://doi.org/10.1109/essderc.2017.8066617
https://doi.org/10.1109/essderc.2017.8066617
Autor:
Guido Groeseneken, Goedele Potoms, E. Vecchio, Simone Lavizzari, Karine Florent, J. Van IHoudt, Mihaela Popovici, L. Di Piazza
Publikováno v:
2017 Symposium on VLSI Technology.
A 3D ferroelectric Al doped HfO 2 device for NAND applications was fabricated for the first time. The polysilicon (poly-Si) channel, whose diameter ranges from 60 to 200 nm, was highly doped for a better understanding of the ferroelectric properties.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fa1ba8332bc35f10e17ffd36719f28e
https://doi.org/10.23919/vlsit.2017.7998162
https://doi.org/10.23919/vlsit.2017.7998162
Autor:
Teng Wang, Gerald Beyer, Fabrice Duval, Arnita Podpod, Goedele Potoms, Julien Bertheau, Yoshitaka Kamochi, Greet Verbinnen, Pieter Bex, Erik Sleeckx, Atsushi Nakamura, Alain Phommahaxay, Eric Beyne
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
Among the technological developments pushed by the adoption of Through Silicon Vias and 3D Stacked IC technologies, wafer thinning on a temporary carrier has become a critical element in device processing over the past years. First generation of adhe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cea930aea33b742b6d28f4b51afeba
https://doi.org/10.1109/ectc.2017.50
https://doi.org/10.1109/ectc.2017.50
Autor:
Alice Guerrero, Goedele Potoms, Anne Jourdain, Kim Yess, Alain Phommahaxay, Erik Sleeckx, Gerald Beyer, Dongshun Bai, Kim Arnold, Eric Beyne, Greet Verbinnen
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
Over the past few years, temporary bonding has expanded together with the development of 3D stacked IC (SIC) technology. As maturity of the various processes has constantly improved, process yield and process impact on device performance have become
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f52c5f97fa4c4b8cd2d04f9963c29dd2
https://doi.org/10.1109/ectc.2017.55
https://doi.org/10.1109/ectc.2017.55
Autor:
Anne Jourdain, Kenneth June Rebibis, John Slabbekoorn, Lin Hou, Jaber Derakhshandeh, Teng Wang, G. Beyer, Geraldine Jamieson, Fumihiro Inoue, Carine Gerets, Eric Beyne, Vikas Dubey, Kevin Vandersmissen, Tomas Webers, Andy Miller, Giovanni Capuz, Nancy Heylen, Samuel Suhard, Goedele Potoms, Inge De Preter
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
In this paper a bump-less process is introduced in order to further scale down the pitch of microbumps. Electrical resistance measurement, Cross section SEM and mechanical characterizations show successful 3D stacking using proposed method.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cd8c89b31be4714e660a41f8a935f9a
https://doi.org/10.1109/ectc.2016.377
https://doi.org/10.1109/ectc.2016.377
Autor:
Teng Wang, Wilfred Gal, Sebastiaan Kersjes, Giovanni Capuz, Eric Beyne, Henk Wensink, Goedele Potoms, Kenneth June Rebibis, Francisco Cadacio, Gerald Beyer, Jurrian Zijl, Abdellah Salahouelhadj
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
In the broad-spectrum of 3D system integration technologies, stacking of die at wafer level is considered a promising and cost effective platform solution for 3D device and 2.5D interposer assembly. The 3D die-to-wafer (D2W) approach consists of a se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36cdda7f5cbded739d09332646f038e7
https://doi.org/10.1109/ectc.2016.194
https://doi.org/10.1109/ectc.2016.194
Autor:
Walter Spiess, Erik Sleeckx, Goedele Potoms, Alain Phommahaxay, Stefan Lutter, Greet Verbinnen, Kim Yess, Thomas Rapps, Alice Guerrero, Gerald Beyer, Dongshun Bai, Xiao Liu, Kim Arnold, Eric Beyne, Tim Griesbach
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
Over the past few years, temporary bonding has spread together with the development of 3D stacked IC (SIC) technology. Maturity of the various processes has constantly improved. Early processes enabled first demonstration of circuit thinning and thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3050b30af8086c577894c4a0f1a55dd8
https://doi.org/10.1109/ectc.2016.80
https://doi.org/10.1109/ectc.2016.80