Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Godoy Medina, Andrés"'
Autor:
Pasadas Cantos, Francisco, Medina Rull, Alberto, Toral López, Alejandro, García Ruiz, Francisco Javier, Godoy Medina, Andrés, González Marín, Enrique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1648::2132b533f548cac86f17932755a2da9b
https://hdl.handle.net/10481/80961
https://hdl.handle.net/10481/80961
Autor:
González Marín, Enrique, Toral López, Alejandro, Medina Rull, Alberto, García Ruiz, Francisco Javier, Godoy Medina, Andrés, Pasadas Cantos, Francisco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1648::bb9cfd22674b0c728f0e3a8a6f9ef455
https://hdl.handle.net/10481/80960
https://hdl.handle.net/10481/80960
Autor:
Toral López, Alejandro, González Marín, Enrique, Medina, Alberto, García Ruiz, Francisco Javier, Rodríguez Santiago, Noel, Godoy Medina, Andrés
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
Universidad Camilo José Cela (UCJC)
Universidad Camilo José Cela (UCJC)
2D-materials based BioFETs show up as a promising alternative to nanowire based BioFETs, thanks to their higher sensitivity, compatibility with planar technology and easier surface functionalization. Additionally, this technology facilitates the poss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3a37f002d966b6e4edfa0bc6775205c5
http://hdl.handle.net/10481/55921
http://hdl.handle.net/10481/55921
Autor:
Toral López, Alejandro, Marin, E. G., González-Medina, Jose María, Romero, F. J., Ruiz, F. G., Morales Santos, Diego Pedro, Rodriguez, N., Godoy Medina, Andrés
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
instname
BioFETs based on two-dimensional materials (2DMs) offer a unique opportunity to enhance, at a low cost, the sensitivity of current biosensors enabling the design of compact devices compatible with standard CMOS technology. The unique combination of l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2d767aedb08ac626eaae0d479103d98a
http://hdl.handle.net/10481/55341
http://hdl.handle.net/10481/55341
Autor:
Toral López, Alejandro, González-Medina, Jose María, González Marín, Enrique, Marin-Sanchez, Antonio, García Ruiz, Francisco Javier, Godoy Medina, Andrés
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
instname
In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.
The authors would like to th
The authors would like to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2c11f08587d3e736e3c01c8377cccd9d
http://hdl.handle.net/10481/58486
http://hdl.handle.net/10481/58486
Autor:
Godoy Medina, Andrés
Este trabajo se centra en el ruido de baja frecuencia presente en los transistores de efecto campo. Para los JFETs se analizan las uniones puerta-canal polarizadas en inverso, resolviendo en ellas de modo numérico la ecuación de Poisson. Los result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::404e489e1b8465400e6df01035cbfc18
http://hdl.handle.net/10481/28746
http://hdl.handle.net/10481/28746
Autor:
Toral López, Alejandro, González-Medina, Jose María, González Marín, Enrique, Marin-Sanchez, Antonio, Medina, Alberto, García Ruiz, Francisco Javier, Godoy Medina, Andrés
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
instname
In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.
Pervasive Electronics Advanc
Pervasive Electronics Advanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2e35a6493af015bb7c46ab45cb269882
http://hdl.handle.net/10481/55920
http://hdl.handle.net/10481/55920
Autor:
García Ruiz, Francisco Javier, González Marín, Enrique, Martínez Blanque, Celso Jesús, Tienda Luna, Isabel María, González-Medina, Jose María, Toral López, Alejandro, Donetti, Luca, Godoy Medina, Andrés
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
instname
The hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::155d31d01d78ea2b7748792a75ab88d4
http://hdl.handle.net/10481/58490
http://hdl.handle.net/10481/58490
Autor:
Pasadas, Francisco, Jimenez, David, González Marín, Enrique, García Ruiz, Francisco Javier, Godoy Medina, Andrés
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
instname
A charge model for four-terminal two-dimensional (2D) semiconductor based field-effect transistors (FETs) is proposed. The model is suitable for describing the dynamic response of these devices under time-varying terminal voltage excitations.
Th
Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3cccbea336a01c98eccd5f64e05dc474
http://hdl.handle.net/10481/58483
http://hdl.handle.net/10481/58483
Autor:
Martínez Blanque, Celso Jesús, García Ruiz, Francisco Javier, Donetti, Luca, Toral López, Alejandro, González-Medina, Jose María, González Marín, Enrique, Godoy Medina, Andrés, Gámiz Pérez, Francisco Jesús
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
instname
The electrostatic behavior of p-type nanowires made of antimonide III-V materials (InSb and GaSb) is analyzed by means of a self-consistent solution of the Poisson and Schrödinger equations, under the k·p approximation. The results are compared to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::96a4bb412faa46ffe9a71b5e671383f2
http://hdl.handle.net/10481/58489
http://hdl.handle.net/10481/58489