Zobrazeno 1 - 10
of 214
pro vyhledávání: '"Godoy, Andres"'
Autor:
Cruces, Sofia, Ganeriwala, Mohit D., Lee, Jimin, Völkel, Lukas, Braun, Dennis, Grundmann, Annika, Ran, Ke, Marín, Enrique G., Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Mayer, Joachim, Godoy, Andrés, Daus, Alwin, Lemme, Max C.
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selector
Externí odkaz:
http://arxiv.org/abs/2408.09780
Autor:
Braun, Dennis, Ganeriwala, Mohit D., Völkel, Lukas, Ran, Ke, Lukas, Sebastian, Marín, Enrique G., Hartwig, Oliver, Prechtl, Maximilian, Wahlbrink, Thorsten, Mayer, Joachim, Duesberg, Georg S., Godoy, Andrés, Daus, Alwin, Lemme, Max C.
Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created b
Externí odkaz:
http://arxiv.org/abs/2309.13900
Autor:
Pasadas, Francisco, Medina-Rull, Alberto, Ruiz, Francisco G., Ramos-Silva, Javier Noe, Pacheco-Sanchez, Anibal, Pardo, Mari Carmen, Toral-Lopez, Alejandro, Godoy, Andrés, Ramírez-García, Eloy, Jiménez, David, Marin, Enrique G.
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of
Externí odkaz:
http://arxiv.org/abs/2309.08519
Autor:
Fomin, Mykola, Pasadas, Francisco, Marin, Enrique, Rull, Alberto Medina, Ruiz, Francisco, Godoy, Andres, Zadorozhnyi, Ihor, Beltramo, Guillermo, Brings, Fabian, Vitusevich, Svetlana, Offenhaeusser, Andreas, Kireev, Dmitry
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique technology of gra
Externí odkaz:
http://arxiv.org/abs/2204.09572
Autor:
Grour, Tarek El, Pasadas, Francisco, Medina-Rull, Alberto, Najari, Montassar, Marin, Enrique G., Toral-Lopez, Alejandro, Ruiz, Francisco G., Godoy, Andrés, Jiménez, David, El-Mir, Lassaad
Publikováno v:
IEEE Transactions on Electron Devices, 68(11), 5916-5919, 2021
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson equation in
Externí odkaz:
http://arxiv.org/abs/2109.06585
Autor:
Pasadas, Francisco, Medina-Rull, Alberto, Feijoo, Pedro Carlos, Pacheco-Sanchez, Anibal, Marin, Enrique G., Ruiz, Francisco G., Rodriguez, Noel, Godoy, Andrés, Jiménez, David
Publikováno v:
Nano Express, vol. 2(3), 036001, 2021
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is crucial f
Externí odkaz:
http://arxiv.org/abs/2105.06698
Autor:
Pasadas, Francisco, Marin, Enrique G., Toral-Lopez, Alejandro, Ruiz, Francisco G., Godoy, Andrés, Park, Saungeun, Akinwande, Deji, Jiménez, David
Publikováno v:
npj 2D Materials and Applications, vol. 3(47), 2019
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain curre
Externí odkaz:
http://arxiv.org/abs/2002.01499
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