Zobrazeno 1 - 10
of 134
pro vyhledávání: '"Goan, H. S."'
Publikováno v:
Phys. Rev. A 91, 013812 (2015)
Ultrastrong light-matter interaction in an optomechanical system can result in nonlinear optical effects such as photon blockade. The system-bath couplings in such systems play an essential role in observing these effects. Here we study the quantum c
Externí odkaz:
http://arxiv.org/abs/1410.2863
We give a quantum master equation description of the measurement scheme based on a coplanar microwave cavity capacitively coupled to nano mechanical resonator. The system exhibits a rich bifurcation structure that is analogous to sub/second harmonic
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702512
We study the electrical transport of a harmonically-bound, single-molecule endohedral fullerene shuttle operating in the Coulomb blockade regime, i.e. single electron shuttling. In particular we examine the dependance of the tunnel current on an ultr
Externí odkaz:
http://arxiv.org/abs/cond-mat/0601448
Publikováno v:
Phys. Rev. A 72, 041405(R) (2005)
An enduring challenge for contemporary physics is to experimentally observe and control quantum behavior in macroscopic systems. We show that a single trapped atomic ion could be used to probe the quantum nature of a mesoscopic mechanical oscillator
Externí odkaz:
http://arxiv.org/abs/quant-ph/0501037
Autor:
Hill, Charles D., Hollenberg, L. C. L., Fowler, A. G., Wellard, C. J., Greentree, A. D., Goan, H. -S.
Publikováno v:
Physical Review B 72, 045350 (2005)
We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest
Externí odkaz:
http://arxiv.org/abs/quant-ph/0411104
Publikováno v:
Phys. Rev. B 70, 205342 (2004)
We outline a scheme to accomplish measurements of a solid state double well system (DWS) with both one and two electrons in non-localised bases. We show that, for a single particle, measuring the local charge distribution at the midpoint of a DWS usi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410181
Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These volta
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402642
Publikováno v:
J. Phys.: Cond. Matter, 16, 1011, (2004)
We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402183
Autor:
Wellard, C. J., Hollenberg, L. C. L., Parisoli, F., Kettle, L., Goan, H. -S., McIntosh, J. A., Jamieson, D. N.
Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same effects lead to
Externí odkaz:
http://arxiv.org/abs/cond-mat/0309417
Autor:
Kettle, L. M., Goan, H. S., Smith, Sean C., Wellard, C. J., Hollenberg, L. C. L., Pakes, C. I.
Publikováno v:
Phys. Rev. B 68, 075317 (2003)
In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these variables affect
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308124