Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Go Sakaino"'
Autor:
Kosuke Shinohara, Ryosuke Miyagoshi, Yosuke Suzuki, Ryoko Suzuki, Go Sakaino, Masaaki Shimada, Keisuke Matsumoto
Publikováno v:
Optical Fiber Communication Conference (OFC) 2023.
A 106-Gbps PAM4 operation with an extinction ratio above 3.5 dB and TDECQ values of 1.85 and 3.04 dB was demonstrated using a conventional buried-heterostructure directly modulated laser at temperatures of 25 and 55 °C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6747db674bfc776db5391cca6d294941
https://doi.org/10.1364/ofc.2023.m2d.6
https://doi.org/10.1364/ofc.2023.m2d.6
Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers
Autor:
Zempei Kawazu, Takashi Nagira, Harunaka Yamaguchi, Masayoshi Takemi, Takehiro Nishida, Go Sakaino
Publikováno v:
Journal of Crystal Growth. 414:27-31
We report on the stable growth of ruthenium doped InP (Ru-InP) and its application in optical communication devices, grown by metal-organic vapor phase epitaxy. Ru-InP has semi-insulating characteristics for both n- and p-InP. The resistivity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c1421178ef6bd97dc4e7427b83dda68
https://doi.org/10.1016/j.jcrysgro.2014.10.005
https://doi.org/10.1016/j.jcrysgro.2014.10.005
Publikováno v:
physica status solidi c. 9:342-345
In recent years, ruthenium (Ru) has been focused on the new semi-insulated doping material for InP instead of Fe. Semi-insulated InP is essential for the blocking layer of high modulation speed laser diode in terms of the capacitance and heat dissipa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::224a87139da4477c9f2bb84e4e21a106
https://doi.org/10.1002/pssc.201100262
https://doi.org/10.1002/pssc.201100262
Autor:
T. Takiguchi, Hitoshi Sakuma, Suzuki Daisuke, Go Sakaino, Takashi Nagira, Takahide Ishikawa, Toshitaka Aoyagi, Chikara Watatani
Publikováno v:
22nd IEEE International Semiconductor Laser Conference.
1.3µm-band BH AlGaInAs DFB lasers with p-InP substrate are fabricated for 100GbE (25Gbps × 4 wavelengths). Very high mask margin of over 30% is achieved at 50oC under 25.8Gbps modulation with low operation current.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bfedfa5c038029db70048e3baaacbad
https://doi.org/10.1109/islc.2010.5642644
https://doi.org/10.1109/islc.2010.5642644
Autor:
Etsuji Omura, Y. Yoshida, Kazushige Kawasaki, M. Ohtsubo, M. Takemi, Kazuhisa Takagi, Toshitaka Aoyagi, T. Nishimura, T. Kamizato, Go Sakaino
Publikováno v:
Technical Digest. CLEO/Pacific Rim'95. The Pacific Rim Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f44d066d278ed37360afd9d1e0d91d3a
https://doi.org/10.1109/cleopr.1995.527062
https://doi.org/10.1109/cleopr.1995.527062
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