Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Go Noya"'
Publikováno v:
SPIE Proceedings.
Spin-on-carbon hard mask (SOC HM) has been used in semiconductor manufacturing since 45nm node as an alternative carbon hard mask process to chemical vapor deposition (CVD). As advancement of semiconductor to 2X nm nodes and beyond, multiple patterni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb642b97c8e396131943266a5c9d777e
https://doi.org/10.1117/12.2218504
https://doi.org/10.1117/12.2218504
Autor:
Seiji Taniguchi, Yoshinobu Nishimura, Noboru Mataga, Tadashi Okada, Iwao Yamazaki, Go Noya, Atsuhiro Osuka
Publikováno v:
ResearcherID
A series of 1,4-phenylene-bridged ZP-HP hybrid porphyrins (ZP = zinc porphyrin, HP = free-base porphyrin) 1-8 ZH have been prepared in which an electron-donating ZP moiety is kept constant and electron-accepting HP moieties are varied by introducing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3a42ea51a07b3bb8ee2ab4a54f1395f
https://doi.org/10.1002/(sici)1521-3765(20000103)6:1<33::aid-chem33>3.0.co
https://doi.org/10.1002/(sici)1521-3765(20000103)6:1<33::aid-chem33>3.0.co
Autor:
Takanori Kudo, Yuriko Matsuura, Yasuaki Ide, Georg Pawlowski, Munirathna Padmanaban, Salem K. Mullen, Go Noya, Jin Li, Joonyeon Cho, Huirong Yao
Publikováno v:
SPIE Proceedings.
Photoresists play a key role in enabling the patterning process, and the development of their chemistry has contributed significantly to the industry’s ability to continue shrinking device dimensions. However, with the increasing complexity of patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13686fdb51ae3cd0baf90b73879a573a
https://doi.org/10.1117/12.2013363
https://doi.org/10.1117/12.2013363
Autor:
Naoki Matsumoto, Tatsuro Nagahara, Maki Ishii, Yoshihiro Miyamoto, Georg Pawlowski, Yukie Takemura, Kazuma Yamamoto, Masahiro Ishii, Go Noya
Publikováno v:
Alternative Lithographic Technologies V.
The negative tone development (NTD) process has proven benefits for superior imaging performance in 193nm lithography. Shrink materials, such as AZ® RELACS® have found widespread use as a resolution enhancement technology in conventional 248nm (DUV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d81980f62aed503475eb6d5348d11c92
https://doi.org/10.1117/12.2012077
https://doi.org/10.1117/12.2012077
Autor:
Kung-Hsun Tsao, Hisashi Motobayashi, Katayama Tomohide, Crockett Huang, Yung-Cheng Chang, Chih-Jung Chen, Tsz-Yuan Chen, Simon Chiu, Nick Hsiao, Yu-Huan Liu, Vencent Chang, Go Noya
Publikováno v:
SPIE Proceedings.
Dual damascene technique has been widely applied to IC device fabrication in copper interconnect process. For traditional via-first dual damascene application, a fill material is first employed to fill via to protect over-etching and punch-through of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b96a60344d5a7a74ef31ccc65dfffdf
https://doi.org/10.1117/12.855997
https://doi.org/10.1117/12.855997