Zobrazeno 1 - 10
of 325
pro vyhledávání: '"Gnudi, Antonio"'
Autor:
Giuliano, Federico, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio, Rossetti, Mattia, Depetro, Riccardo
Publikováno v:
In Solid State Electronics August 2022 194
Publikováno v:
In Solid State Electronics August 2022 194
Autor:
Balestra, Luigi, Reggiani, Susanna, Gnudi, Antonio, Gnani, Elena, Dobrzyńska, Jagoda, Vobecký, Jan
Publikováno v:
In Solid State Electronics July 2022 193
Autor:
Giuliano, Federico, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio, Rossetti, Mattia, Depetro, Riccardo, Croce, Giuseppe
Publikováno v:
In Solid State Electronics June 2022 192
Autor:
Elgani, Alessia Maria, D'Addato, Matteo, Perilli, Luca, Franchi Scarselli, Eleonora, Gnudi, Antonio, Canegallo, Roberto, Ricotti, Giulio
Publikováno v:
Sensors (14248220); Oct2024, Vol. 24 Issue 19, p6369, 15p
Autor:
Vaziri, Sam, Smith, Anderson D., Östling, Mikael, Lupina, Grzegorz, Dabrowski, Jarek, Lippert, Gunther, Driussi, Francesco, Venica, Stefano, Di Lecce, Valerio, Gnudi, Antonio, König, Matthias, Ruhl, Günther, Belete, Melkamu, Lemme, Max C.
Publikováno v:
Solid State Communications 224, 64-75, 2015
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indica
Externí odkaz:
http://arxiv.org/abs/1509.01025
Publikováno v:
In Solid State Electronics October 2020 172
Autor:
Pugnaghi, Claudio, Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio
Publikováno v:
J. Appl. Phys. 116, 114505 (2014)
We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and drain regions are doped by charge transfer with Schottky contacts, whil
Externí odkaz:
http://arxiv.org/abs/1409.6436
Autor:
Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio
Publikováno v:
Solid-State Electronics, vol. 100, pp. 54-60, 2014
We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the device char
Externí odkaz:
http://arxiv.org/abs/1401.4153
Autor:
Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio
Publikováno v:
IEEE Transactions on Electron Devices, vol. 61, no. 2, pp. 617-624, 2014
Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene FETs in the bias region of negative output differential resistance. We show that, compared to the region of quasi-saturation, a voltage gain l
Externí odkaz:
http://arxiv.org/abs/1309.1105