Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Gnanasampanthan Abiram"'
Autor:
Gnanasampanthan Abiram, Fatemeh Heidari Gourji, Selvakumar Pitchaiya, Punniamoorthy Ravirajan, Thanihaichelvan Murugathas, Dhayalan Velauthapillai
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin film for field-effect transistor (FET) applications. The Cs2AgBiBr6 thin films were fabricated using a solution process technique and the observe
Externí odkaz:
https://doaj.org/article/8cc23663a3554647919973bab3a09f5e
Autor:
Gnanasampanthan Abiram, Murugathas Thanihaichelvan, Punniamoorthy Ravirajan, Dhayalan Velauthapillai
Publikováno v:
Nanomaterials, Vol 12, Iss 14, p 2396 (2022)
Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel mat
Externí odkaz:
https://doaj.org/article/f07605691c64404a9b44e54a06edb69a
Autor:
Punniamoorthy Ravirajan, Gnanasampanthan Abiram, Fatemeh Heidari Gourji, Dhayalan Velauthapillai, Selvakumar Pitchaiya, Thanihaichelvan Murugathas
This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin film for field-effect transistor (FET) applications. The Cs2AgBiBr6 thin films were fabricated using a solution process technique and the observed XRD pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5141a07bb8126365e7f201632a737781
https://doi.org/10.21203/rs.3.rs-1055848/v1
https://doi.org/10.21203/rs.3.rs-1055848/v1
Autor:
Gnanasampanthan, Abiram, Fatemeh Heidari, Gourji, Selvakumar, Pitchaiya, Punniamoorthy, Ravirajan, Thanihaichelvan, Murugathas, Dhayalan, Velauthapillai
Publikováno v:
Scientific reports. 12(1)
This study focuses on the fabrication and characterization of Cs