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pro vyhledávání: '"Gmili, Youssef El"'
Autor:
Gmili, Youssef El
GaN et ses alliages ternaires et quaternaires du système Ga(B,In,Al) sont devenus au cours des dernières années des semiconducteurs phare de l'optoélectronique. Plus spécifiquement l'alliage InGaN qui présente une énergie de bande interdite (0
Externí odkaz:
http://www.theses.fr/2013LORR0228/document
Autor:
Puybaret, Renaud, Patriarche, Gilles, Jordan, Matthew B., Sundaram, Suresh, Gmili, Youssef El, Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, Ougazzaden, Abdallah
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective
Externí odkaz:
http://arxiv.org/abs/1510.04513
Autor:
Arif, Muhammad, Sundaram, Suresh, Streque, Jérémy, Gmili, Youssef El, Puybaret, Renaud, Belahsene, Sofiane, Ramdane, Abderahim, Martinez, Anthony, Patriarche, Gilles, Fix, Thomas, Slaoui, Abdelillah, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
Publikováno v:
AIP Conference Proceedings; 2015, Vol. 1679 Issue 1, p1-9, 9p, 1 Color Photograph, 1 Black and White Photograph, 3 Diagrams, 6 Graphs
Autor:
Li, Xin, Sundaram, Suresh, Gmili, Youssef El, Moudakir, Tarik, Genty, Frédéric, Bouchoule, Sophie, Patriarche, Gilles, Dupuis, Russell D., Voss, Paul L., Salvestrini, Jean‐Paul, Ougazzaden, Abdallah
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; Apr2015, Vol. 212 Issue 4, p745-750, 6p
Autor:
Puybaret R; Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, United States of America. CNRS, GT UMI 2958, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz, France., Rogers DJ, Gmili YE, Sundaram S, Jordan MB, Li X, Patriarche G, Teherani FH, Sandana EV, Bove P, Voss PL, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, Ougazzaden A
Publikováno v:
Nanotechnology [Nanotechnology] 2017 May 12; Vol. 28 (19), pp. 195304. Date of Electronic Publication: 2017 Mar 30.