Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Glenn W. Gale"'
Autor:
Glenn W. Gale
Publikováno v:
Solid State Phenomena. 282:3-9
The semiconductor industry is undergoing a transition driven by end use markets. In recent years, mobile devices have been the leading generator of growth. Now the connection of various products and machines to the internet is generating new and exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df6922ee0f61fc6f6d16728f4e5d004
https://doi.org/10.4028/www.scientific.net/ssp.282.3
https://doi.org/10.4028/www.scientific.net/ssp.282.3
Autor:
Kaveh Bakhtari, Twan Bearda, Stephen P. Beaudoin, Joel L. Bigman, Brian Brown, Ahmed Busnaina, Yves J. Chabal, Yufei Chen, Hua Cui, Doru Florescu, Glenn W. Gale, Dennis W. Hess, Steven M. Hues, Werner Kern, Brian A. Knollenberg, Jeffrey M. Lauerhaas, Luke Lovejoy, Paul W. Mertens, Katrina Mikhaylichenko, Anthony J. Muscat, Nagarjuna R. Paluvai, Jin-Goo Park, Fritz Redeker, Richard F. Reidy, Karen A. Reinhardt, Daniel R. Rodier, Antonio L.P. Rotondaro, Sara M. Rupich, R. Prasanna Venkatesh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5cda66442a5f147b6a3d106f3ebd38b
https://doi.org/10.1016/b978-0-323-51084-4.01002-9
https://doi.org/10.1016/b978-0-323-51084-4.01002-9
Publikováno v:
Handbook of Semiconductor Manufacturing Technology ISBN: 9781315213934
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bf08f63cdd81eb9e878326de884bf38
https://doi.org/10.1201/9781420017663-5
https://doi.org/10.1201/9781420017663-5
Autor:
G. Cado, Twan Bearda, Glenn W. Gale, Kurt Wostyn, C. Springer, S. Pichler, Michael Dalmer, D. Podlesnik, Ernst Gaulhofer, K. Xu, Paul Mertens
Publikováno v:
Solid State Phenomena. :31-34
As the dimensions of the structures of integrated circuits shrink, the influence of particles on device yield becomes increasingly important. According to the cleaning requirements of the International Technology Roadmap for Semiconductors (ITRS) in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec1bb58d4ef2f3b4bd0b30b3595ab911
https://doi.org/10.4028/www.scientific.net/ssp.145-146.31
https://doi.org/10.4028/www.scientific.net/ssp.145-146.31
Autor:
Ernst Gaulhofer, Sofie Mertens, Frederic Kovacs, P. Mertens, Harald Kraus, Rita Vos, Kaidong Xu, Caroline Demeurisse, Michael Dalmer, Anne Lauwers, Glenn W. Gale, Leo Archer, Sally-Ann Henry
Publikováno v:
ECS Transactions. 11:327-334
Ni(alloy) silicides have recently gained much attention due to their improved properties. Ni(Pt)Si has indeed become one of most promising candidates to replace NiSi as contact electrodes. To avoid bridging at the spacers and the isolation areas, aft
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a96dce1543319310470ec00f07c281a
https://doi.org/10.1149/1.2779395
https://doi.org/10.1149/1.2779395
Publikováno v:
Solid State Phenomena. :83-86
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b0f722a13ad43f3a0b8817cbc788627
https://doi.org/10.4028/www.scientific.net/ssp.103-104.83
https://doi.org/10.4028/www.scientific.net/ssp.103-104.83
Autor:
Glenn W. Gale, Naoki Shindo, Keji Taguchi, Shigenori Kitahara, Tadashi Iino, Takayuki Toshima
Publikováno v:
Solid State Phenomena. 92:227-230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::338f544afcf1179960169f83b1bb670f
https://doi.org/10.4028/www.scientific.net/ssp.92.227
https://doi.org/10.4028/www.scientific.net/ssp.92.227
Publikováno v:
Journal of The Electrochemical Society. 146:3522-3526
Experimental measurements have been made by total reflection X‐ray fluorescence spectroscopy of dissolution of K and Cl from p‐type silicon wafers by deionized water. The dissolution rate of these ions is initially rapid, then slows dramatically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::179770a8f02996d5f17fdc7c2cf6517d
https://doi.org/10.1149/1.1392508
https://doi.org/10.1149/1.1392508
Autor:
Ahmed Busnaina, Glenn W. Gale
Publikováno v:
Particulate Science and Technology. 17:229-238
Despite wide use of megasonics in the semiconductor industry, the physics of megasonic particle removal remains largely unexplained. Mechanisms of particle removal in sonic baths are discussed, including the effects of operating parameters such as fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f203f83d2bdda1c1dff384928169b2
https://doi.org/10.1080/02726359908906815
https://doi.org/10.1080/02726359908906815
Publikováno v:
Chemical Engineering Communications. 165:167-176
A technique for the visualization of film coverage is described. The technique can be applied in instances where surface regions wetted by a flow need to be identified, but cannot be visualized in real time due to geometric considerations (difficult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0ca8fa3221029036288ea60ee16aa6
https://doi.org/10.1080/00986449808912374
https://doi.org/10.1080/00986449808912374