Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Glenn Packard"'
Publikováno v:
ECS Transactions. 98:131-139
Flash lamp annealing (FLA) has been explored as an alternative to excimer laser annealed low-temperature polycrystalline silicon (LTPS) for display applications and has shown potential to streamline and decrease the cost of fabrication while maintain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a4d028bbc4ea33eeec221bea8a89145
https://doi.org/10.1149/09807.0131ecst
https://doi.org/10.1149/09807.0131ecst
Publikováno v:
ECS Transactions. 90:79-88
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa52a65a857b3db1cd313ce0b5eb953
https://doi.org/10.1149/09001.0079ecst
https://doi.org/10.1149/09001.0079ecst
Autor:
Carolyn Spaulding, Alex Taylor, Scott Williams, Glenn Packard, Gabriel Curvacho, Santosh Kurinec
Publikováno v:
Materials Letters. 325:132839
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0365a22a744699c5ba24e21ba2b8b11
https://doi.org/10.1016/j.matlet.2022.132839
https://doi.org/10.1016/j.matlet.2022.132839
Autor:
Robert George Manley, Glenn Packard, Viraj Garg, Paul Bischoff, Karl D. Hirschman, Karthik Bhadrachalam, Adam Rosenfeld
Publikováno v:
ECS Transactions. 86:57-72
The development of low-temperature polycrystalline silicon (LTPS) based on excimer laser annealing (ELA) has realized CMOS TFTs with notable electrical performance. The flat-panel display industry is searching for alternative LTPS strategies which ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::199e5c64fb807af9f9252a50ea2a6f4b
https://doi.org/10.1149/08611.0057ecst
https://doi.org/10.1149/08611.0057ecst
Autor:
Santosh K. Kurinec, Scott Williams, Glenn Packard, Karl D. Hirschman, Alex Taylor, Carolyn Spaulding
Publikováno v:
Materials Letters. 305:130780
We report doping of thin (~60 nm) amorphous silicon (a-Si) on glass substrate to form n + polycrystalline silicon on glass in selective regions using Monolayer doping (MLD) via Flash Lamp Annealing (FLA). The phosphorus monolayer was formed on the ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141c9da025f9a0ce960d75e3e699395a
https://doi.org/10.1016/j.matlet.2021.130780
https://doi.org/10.1016/j.matlet.2021.130780
Publikováno v:
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Flash lamp annealing is explored as a replacement process for crystallization of amorphous silicon and activation of boron introduced subsequently by ion implantation. Single-stage crystallization/activation and two-stage crystallization + activation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8186642715b526777e16fa8de5926615
https://doi.org/10.23919/am-fpd.2019.8830629
https://doi.org/10.23919/am-fpd.2019.8830629
Publikováno v:
ECS Meeting Abstracts. :1936-1936
Low-Temperature Polycrystalline Silicon (LTPS) thin-film transistors (TFTs) are usually built as a top-gate structure. This is due to the serious challenge presented by locally crystallizing a thin layer of amorphous silicon that has regions of overl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc10a0e61c119fcd590087149e096c62
https://doi.org/10.1149/ma2020-02281936mtgabs
https://doi.org/10.1149/ma2020-02281936mtgabs