Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Glenn G, Jernigan"'
Autor:
Adam L. Friedman, Aubrey T. Hanbicki, F. Keith Perkins, Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract Electron-donors can impart charge to the surface of transition metal dichalcogenide (TMD) films while interacting with the film via a weak physisorption bond, making them ideal for vapor and gas sensors. We expose monolayer MoS2 and MoSe2 fi
Externí odkaz:
https://doaj.org/article/d8829c9ec2f94e5486f9ff54b756411b
Autor:
Jeremy T. Robinson, Glenn G. Jernigan, Tanushree H. Choudhury, Cory D. Cress, Mikhail Chubarov, Jose J. Fonseca
Publikováno v:
The Journal of Physical Chemistry C. 124:25361-25368
X-ray and ultraviolet photoelectron spectroscopy are performed on transition metal dichalcogenides (TMDs) MoS2, MoSe2, and MoTe2 monolayers on Au surfaces, to identify charge transfer processes and...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eb17c67562a7aab634f0393dede7c28
https://doi.org/10.1021/acs.jpcc.0c07813
https://doi.org/10.1021/acs.jpcc.0c07813
Autor:
Mark S. Goorsky, Chaitanya Gadre, Nicholas J. Hines, Glenn G. Jernigan, Samuel Graham, Xingxu Yan, Ruiyang Li, Michael E. Liao, Eungkyu Lee, Zhe Cheng, Tengfei Luo, Xiaoqing Pan, Juan Carlos Idrobo, Jingjing Shi, Karl D. Hobart
Publikováno v:
Nature Communications
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
Nature communications, vol 12, iss 1
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
Nature communications, vol 12, iss 1
Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3aa8f257bd264e95eb1de6a8cf540a7a
https://doi.org/10.1038/s41467-021-27250-3
https://doi.org/10.1038/s41467-021-27250-3
Autor:
Saujan V. Sivaram, Hsun-Jen Chuang, Berend T Jonker, Aubrey T. Hanbicki, Kathleen M. McCreary, Matthew R. Rosenberger, Glenn G. Jernigan
Publikováno v:
ACS Applied Materials & Interfaces. 11:16147-16155
Monolayers of transition-metal dichalcogenides (TMDs) are promising components for flexible optoelectronic devices because of their direct band gap and atomically thin nature. The photoluminescence (PL) from these materials is often strongly suppress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6090a6dc1c66de3c9ed610f79a8889b0
https://doi.org/10.1021/acsami.9b00390
https://doi.org/10.1021/acsami.9b00390
Autor:
Eddy Collin, Sumit Kumar, David Schmoranzer, Xiao Liu, Andrew Fefferman, Sébastien Triqueneaux, T. H. Metcalf, Glenn G. Jernigan
Publikováno v:
Cryogenics
Cryogenics, Elsevier, 2020, 110, pp.103162. ⟨10.1016/j.cryogenics.2020.103162⟩
Cryogenics, Elsevier, 2020, 110, pp.103162. ⟨10.1016/j.cryogenics.2020.103162⟩
International audience; Cryogen-free dilution refrigerators generally simplify low temperature research but some types of samples, including superconducting qubits and other nanoelectronic devices, are affected by environmental heat sources such as s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc39f866680452abdaf106d385379413
Autor:
Xiao Liu, James C. Culbertson, Thomas Metcalf, Matthew Abernathy, Glenn G. Jernigan, Frances Hellman, Manel Molina-Ruiz
Publikováno v:
Journal of Alloys and Compounds. 856:157616
Motivated to create a germanium analog to nearly two-level-tunneling-system (TLS)-free amorphous silicon, six germanium films, all about 350 nm thick, were deposited by molecular beam epitaxy onto substrates held at temperatures between room temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d364e0238e1def8e75e55a7ae14b2a4c
https://doi.org/10.1016/j.jallcom.2020.157616
https://doi.org/10.1016/j.jallcom.2020.157616
Autor:
Yanfa Yan, Woojun Yoon, David Scheiman, Young-Woo Ok, Cong Chen, Phillip P. Jenkins, Ajeet Rohatgi, Zhaoning Song, Glenn G. Jernigan
Publikováno v:
Solar Energy Materials and Solar Cells. 210:110482
We focus on utilizing sputtered indium tin oxide (ITO) as a recombination layer, having low junction damage to an n-type silicon solar cell with a front-side tunnel oxide passivating electron contact, thereby enabling the development of a high effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42809da2566af5e8363e1e6a7fe7e8fe
https://doi.org/10.1016/j.solmat.2020.110482
https://doi.org/10.1016/j.solmat.2020.110482
Autor:
Talat S. Rahman, Darian Smalley, Masahiro Ishigami, Jeremy T. Robinson, Duy Le, Jesse Thompson, Stephanie Lough, Jose J. Fonseca, Glenn G. Jernigan, Brandon Blue
Publikováno v:
2D Materials. 7:025021
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::514196ccb5432257599b4364c9e7826b
https://doi.org/10.1088/2053-1583/ab6d34
https://doi.org/10.1088/2053-1583/ab6d34
Publikováno v:
2018 31st International Vacuum Nanoelectronics Conference (IVNC).
We report field emission energy distributions from planar graphene edges. Field effect transistors with integrated gate and drain electrodes and vacuum transport parallel to the substrate surface are fabricated using graphene edge emission sources ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce6aaa41ebb4f5159bb912c624216e82
https://doi.org/10.1109/ivnc.2018.8520231
https://doi.org/10.1109/ivnc.2018.8520231
Autor:
Zachary R. Robinson, Rachael L. Myers-Ward, Anindya Nath, Konrad Bussmann, Jennifer K. Hite, Mulpuri V. Rao, N.Y. Garces, Luke O. Nyakiti, James A. Wollmershauser, Charles R. Eddy, Glenn G. Jernigan, Virginia D. Wheeler, D. Kurt Gaskill, Marc Currie, Boris N. Feigelson
Publikováno v:
Carbon. 81:73-82
Controlling the uniformity and morphology of graphene grown on the C-face of SiC is more difficult than on the Si-face. To improve graphene grown on the C-face, a continuous growth process was developed in a conventional tube furnace that included in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f48b21adf7d4462445787dd20c19bb29
https://doi.org/10.1016/j.carbon.2014.09.025
https://doi.org/10.1016/j.carbon.2014.09.025