Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Glenn B. Alers"'
Publikováno v:
Nanomaterials and Nanotechnology, Vol 2, Iss , p 18 (2012)
Photovoltaic performance is shown to depend on ligand capping on PbS nanoparticle solar cells by varying the temperature between 140K and 350K. The thermal response of open‐circuit voltage, short‐circuit current density, fill‐factor and shunt r
Externí odkaz:
https://doaj.org/article/ae11a224098a4fa1b522400a582cacc2
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:148-152
Failure modes for inter-level dielectric layers under accelerated test conditions have been evaluated for a range of dielectric diffusion barriers in copper/low-k structures. The dominant failure mechanism for both constant voltage tests and ramped v
Publikováno v:
Microelectronics Reliability. 43:1215-1220
A ramped dielectric stress measurement, suitable for fast wafer level reliability (fWLR) monitoring, is assessed for thin gate oxide thicknesses down to 2.2 nm. Severe difficulties usually occur for the reliable detection of soft/hard breakdown in a
Autor:
H. C. Lu, Evgeni Gusev, Glenn B. Alers, Martin L. Green, Torgny Gustafsson, N. Yasuda, Eric Garfunkel
Publikováno v:
Applied Surface Science. 166:465-468
We summarize some recent work on the formation mechanisms, structure and composition of oxynitride and high-K films, as investigated by high-resolution medium-energy ion scattering (MEIS). We show that nitridation of a silicon oxide thin film takes p
Autor:
D. V. Lang, A.M. Sergent, Donald W. Murphy, R. B. van Dover, Christopher D. W. Jones, Y. H. Wong, R. M. Fleming, Glenn B. Alers, M. L. Steigerwald, J. Kwo
Publikováno v:
Journal of Applied Physics. 88:850-862
Ta2O5 is a candidate for use in metal–oxide–metal (MOM) capacitors in several areas of silicon device technology. Understanding and controlling leakage current is critical for successful implementation of this material. We have studied thermal an
Publikováno v:
Journal of Applied Physics. 79:7596-7603
1/f noise and high‐resolution resistance measurements have been performed in isolated aluminum via interconnects under electromigration stress. The test structures had a volume of roughly 1 μm3 and a resistance of 0.1 Ω with an internal TiN diffu
Publikováno v:
Journal of Applied Physics. 87:6304-6306
A novel type of surface acoustic wave (SAW) device is introduced, in which coupling between the transducer and the acoustic medium is achieved using a magnetostrictive thin film. These MTSAW (magnetically-transduced SAW) devices have several advantag
Publikováno v:
Applied Physics Letters. 76:592-594
We have measured the 1/f noise through the metal–nonmetal transition in carbon black/polymer composites as a function of temperature and doping. At the electronic transition, the resistivity power spectrum Sρ varies as Sρ∼ρQ, with Q=2.77, in a
Autor:
Roy H. Geiss, David T. Read, Glenn B. Alers, Rebekah L. Graham, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Publikováno v:
AIP Conference Proceedings.
Orientation imaging microscopy by electron backscatter diffraction (EBSD) has been used to examine grain size and crystallographic orientations of damascene Cu lines nominally 25 nm to 55 nm in width and 100 nm thick. These are the smallest structure
Publikováno v:
Applied Physics Letters. 74:3705-3707
Using x-ray photoelectron spectroscopy and Rutherford backscattering spectrometry, we have studied structures used in metal–oxide–metal capacitors including Ta2O5/TiN/Ti, Ta2O5/Ti, Ta2O5/TaN/Ti, Ta2O5/WN/Ti, and Ta2O5/M, where M=Ta, Pt, W, Al, an