Zobrazeno 1 - 10
of 4 397
pro vyhledávání: '"Glavin A"'
Autor:
He, Yunfei, Moore, David C., Wang, Yubo, Ware, Spencer, Ma, Sizhe, Pradhan, Dhiren K., Hu, Zekun, Du, Xingyu, Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep
Ferroelectric (FE)-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we fabricated and characterized metal ferroelectric semiconductor capacitors inte
Externí odkaz:
http://arxiv.org/abs/2411.16652
Autor:
R, Karthik, Srivastava, Ashutosh, Midya, Soumen, Shanu, Akbar, Slathia, Surbhi, Vandana, Sajith, Sreeram, Punathil Raman, Kar, Swastik, Glavin, Nicholas R., Roy, Ajit K, Singh, Abhishek Kumar, Tiwary, Chandra Sekhar
Miniaturization of electronic components has led to overheating, increasing power consumption and causing early circuit failures. Conventional heat dissipation methods are becoming inadequate due to limited surface area and higher short-circuit risks
Externí odkaz:
http://arxiv.org/abs/2411.10030
Hyperspectral Imaging (HSI) is known for its advantages over traditional RGB imaging in remote sensing, agriculture, and medicine. Recently, it has gained attention for enhancing Advanced Driving Assistance Systems (ADAS) perception. Several HSI data
Externí odkaz:
http://arxiv.org/abs/2410.22101
Autor:
Lauretta, Dante S., Connolly, Jr., Harold C., Aebersold, Joseph E., Alexander, Conel M. O. D., Ballouz, Ronald-L., Barnes, Jessica J., Bates, Helena C., Bennett, Carina A., Blanche, Laurinne, Blumenfeld, Erika H., Clemett, Simon J., Cody, George D., DellaGiustina, Daniella N., Dworkin, Jason P., Eckley, Scott A., Foustoukos, Dionysis I., Franchi, Ian A., Glavin, Daniel P., Greenwood, Richard C., Haenecour, Pierre, Hamilton, Victoria E., Hill, Dolores H., Hiroi, Takahiro, Ishimaru, Kana, Jourdan, Fred, Kaplan, Hannah H., Keller, Lindsay P., King, Ashley J., Koefoed, Piers, Kontogiannis, Melissa K., Le, Loan, Macke, Robert J., McCoy, Timothy J., Milliken, Ralph E., Najorka, Jens, Nguyen, Ann N., Pajola, Maurizio, Polit, Anjani T., Roper, Heather L., Russell, Sara S., Ryan, Andrew J., Sandford, Scott A., Schofield, Paul F., Schultz, Cody D., Tachibana, Shogo, Thomas-Keprta, Kathie L., Thompson, Michelle S., Tu, Valerie, Tusberti, Filippo, Wang, Kun, Zega, Thomas J., Wolner, C. W. V., Team, the OSIRIS-REx Sample Analysis
On 24 September 2023, the NASA OSIRIS-REx mission dropped a capsule to Earth containing approximately 120 g of pristine carbonaceous regolith from Bennu. We describe the delivery and initial allocation of this asteroid sample and introduce its bulk p
Externí odkaz:
http://arxiv.org/abs/2404.12536
Autor:
Pradhan, Dhiren K., Moore, David C., Francis, A. Matt, Kupernik, Jacob, Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstrea
Externí odkaz:
http://arxiv.org/abs/2404.03510
From the laboratory to real-world applications, synthesis of two dimensional (2D) materials requires modular techniques to control morphology, structure, chemistry, and the plethora of exciting properties arising from these nanoscale materials. In th
Externí odkaz:
http://arxiv.org/abs/2401.16513
Autor:
Pandey, Vineet, Mishra, Subhendu, Maity, Nikhilesh, Paul, Sourav, B, Abhijith M, Roy, Ajit, Glavin, Nicholas R, Watanabe, Kenji, Taniguchi, Takashi, Singh, Abhishek Kumar, Kochat, Vidya
Publikováno v:
ACS Nano 2024
Twisted 2D layered materials have garnered a lot of attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relative rotation / twist angle between the adjacent layers. In this work, w
Externí odkaz:
http://arxiv.org/abs/2311.01029
Autor:
Pradhan, Dhiren K., Moore, David C., Kim, Gwangwoo, He, Yunfei, Musavigharavi, Pariasadat, Kim, Kwan-Ho, Sharma, Nishant, Han, Zirun, Du, Xingyu, Puli, Venkata S., Stach, Eric A., Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerg
Externí odkaz:
http://arxiv.org/abs/2309.04555
Autor:
Kim, Gwangwoo, Huet, Benjamin, Stevens, Christopher E., Jo, Kiyoung, Tsai, Jeng-Yuan, Bachu, Saiphaneendra, Leger, Meghan, Ma, Kyung Yeol, Glavin, Nicholas R., Shin, Hyeon Suk, Alem, Nasim, Yan, Qimin, Hedrickson, Joshua R., Redwing, Joan M., Jariwala, Deep
Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-p
Externí odkaz:
http://arxiv.org/abs/2307.06404
Autor:
Gwangwoo Kim, Benjamin Huet, Christopher E. Stevens, Kiyoung Jo, Jeng-Yuan Tsai, Saiphaneendra Bachu, Meghan Leger, Seunguk Song, Mahfujur Rahaman, Kyung Yeol Ma, Nicholas R. Glavin, Hyeon Suk Shin, Nasim Alem, Qimin Yan, Joshua R. Hendrickson, Joan M. Redwing, Deep Jariwala
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensi
Externí odkaz:
https://doaj.org/article/c540337d48bb4830a415a154efef4bd9