Zobrazeno 1 - 10
of 322
pro vyhledávání: '"Glavin, Nicholas"'
Autor:
R, Karthik, Srivastava, Ashutosh, Midya, Soumen, Shanu, Akbar, Slathia, Surbhi, Vandana, Sajith, Sreeram, Punathil Raman, Kar, Swastik, Glavin, Nicholas R., Roy, Ajit K, Singh, Abhishek Kumar, Tiwary, Chandra Sekhar
Miniaturization of electronic components has led to overheating, increasing power consumption and causing early circuit failures. Conventional heat dissipation methods are becoming inadequate due to limited surface area and higher short-circuit risks
Externí odkaz:
http://arxiv.org/abs/2411.10030
Autor:
Pradhan, Dhiren K., Moore, David C., Francis, A. Matt, Kupernik, Jacob, Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstrea
Externí odkaz:
http://arxiv.org/abs/2404.03510
From the laboratory to real-world applications, synthesis of two dimensional (2D) materials requires modular techniques to control morphology, structure, chemistry, and the plethora of exciting properties arising from these nanoscale materials. In th
Externí odkaz:
http://arxiv.org/abs/2401.16513
Autor:
Pandey, Vineet, Mishra, Subhendu, Maity, Nikhilesh, Paul, Sourav, B, Abhijith M, Roy, Ajit, Glavin, Nicholas R, Watanabe, Kenji, Taniguchi, Takashi, Singh, Abhishek Kumar, Kochat, Vidya
Publikováno v:
ACS Nano 2024
Twisted 2D layered materials have garnered a lot of attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relative rotation / twist angle between the adjacent layers. In this work, w
Externí odkaz:
http://arxiv.org/abs/2311.01029
Autor:
Pradhan, Dhiren K., Moore, David C., Kim, Gwangwoo, He, Yunfei, Musavigharavi, Pariasadat, Kim, Kwan-Ho, Sharma, Nishant, Han, Zirun, Du, Xingyu, Puli, Venkata S., Stach, Eric A., Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerg
Externí odkaz:
http://arxiv.org/abs/2309.04555
Autor:
Kim, Gwangwoo, Huet, Benjamin, Stevens, Christopher E., Jo, Kiyoung, Tsai, Jeng-Yuan, Bachu, Saiphaneendra, Leger, Meghan, Ma, Kyung Yeol, Glavin, Nicholas R., Shin, Hyeon Suk, Alem, Nasim, Yan, Qimin, Hedrickson, Joshua R., Redwing, Joan M., Jariwala, Deep
Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-p
Externí odkaz:
http://arxiv.org/abs/2307.06404
Autor:
Song, Seunguk, Jeon, Sungho, Rahaman, Mahfujur, Lynch, Jason, Kumar, Pawan, Chakravarthi, Srikrishna, Kim, Gwangwoo, Du, Xingyu, Blanton, Eric, Kisslinger, Kim, Snure, Michael, Glavin, Nicholas R., Stach, Eric A., Olsson, Roy H., Jariwala, Deep
Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dicha
Externí odkaz:
http://arxiv.org/abs/2303.02530
Autor:
Alfieri, Adam D., Motala, Michael J., Snure, Michael, Lynch, Jason, Kumar, Pawan, Zhang, Huiqin, Post, Susanna, Muratore, Christopher, Hendrickson, Joshua R., Glavin, Nicholas R., Jariwala, Deep
Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and sem
Externí odkaz:
http://arxiv.org/abs/2208.13269
Autor:
Kim, Gwangwoo, Kim, Hyong Min, Kumar, Pawan, Rahaman, Mahfujur, Stevens, Christopher E., Jeon, Jonghyuk, Jo, Kiyoung, Kim, Kwan-Ho, Trainor, Nicholas, Zhu, Haoyue, Sohn, Byeong-Hyeok, Stach, Eric A., Hendrickson, Joshua R., Glavin, Nicholas R, Suh, Joonki, Redwing, Joan M., Jariwala, Deep
Publikováno v:
ACS Nano, 2022
Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithograp
Externí odkaz:
http://arxiv.org/abs/2204.00397
Autor:
Saju, Sreehari K., Puthirath, Anand B., Wang, Shancheng, Tsafack, Thierry, Beagle, Lucas K., Baydin, Andrey, Chakingal, Nithya, Komatsu, Natsumi, Tay, Fuyang, Sharma, Arvin, Sreenivasan, Rohini, Kono, Junichiro, Vajtai, Robert, Glavin, Nicholas R., Long, Yi, Ajayan, Pulickel M.
Publikováno v:
In Joule 18 September 2024 8(9):2696-2714
