Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Glauberman, M. A."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2-3, Pp 28-32 (2013)
The magnetotransistor models which are not based on the resolution of two-dimension continuity equation are examined. It is shown that a contradiction between results of these models and results of exact theory vanishes when the resolution of one-dim
Externí odkaz:
https://doaj.org/article/e123b94ede2447e3ab92fef732f27ccf
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 62-64 (2008)
The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It
Externí odkaz:
https://doaj.org/article/0354e8c540534ede9237787b0d30d1e7
Autor:
Glauberman, M., author
Publikováno v:
Descartes: The Probable and the Certain. :316-358
Autor:
Glauberman, M., author
Publikováno v:
Descartes: The Probable and the Certain. :198-262
Autor:
Glauberman, M., author
Publikováno v:
Descartes: The Probable and the Certain. :45-80
Autor:
Glauberman, M., author
Publikováno v:
Descartes: The Probable and the Certain. :263-315
Autor:
Glauberman, M., author
Publikováno v:
Descartes: The Probable and the Certain. :124-161
Autor:
Glauberman, M., author
Publikováno v:
Descartes: The Probable and the Certain. :14-44
Autor:
Glauberman, M., author
Publikováno v:
Descartes: The Probable and the Certain. :162-197
Autor:
Glauberman, M., author
Publikováno v:
Descartes: The Probable and the Certain. :3-13