1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability

Autor: Zubov, F. I., Gladii, S. P., Shernyakov, Yu M., Maximov, M. V., Semenova, Elizaveta, Kulkova, I. V., Yvind, Kresten, Zhukov, A. E.

Publikováno v: Zubov, F I, Gladii, S P, Shernyakov, Y M, Maximov, M V, Semenova, E, Kulkova, I V, Yvind, K & Zhukov, A E 2016, ' 1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability ', Journal of Physics: Conference Series (Online), vol. 741 . https://doi.org/10.1088/1742-6596/741/1/012109

Temperature characteristics of InAs/InGaAsP quantum dot (QD) lasers synthesized on InP (001) substrate are presented. The lasers demonstrate high temperature stability: a threshold current characteristic temperature as high as 205 K in the temperatur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1202::7c5ee8600ad2aa50e4d1699cb2298b3b
https://orbit.dtu.dk/en/publications/8e7b9924-7da2-4e9a-b4e7-fa12cff5fc47