Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Giuseppe Moschetti"'
Autor:
Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian, Giuseppe Moschetti, Joel Schleeh, Thilo Bauch, Jan Grahn
Publikováno v:
AIP Advances, Vol 9, Iss 8, Pp 085004-085004-4 (2019)
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT
Externí odkaz:
https://doaj.org/article/2d07b1e5649845e8a79e6c4111b8b85d
Autor:
Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti, Arsalan Pourkabirian, Jörgen Stenarson, Junjie Li, Dae-Hyun Kim, Jan Grahn
Publikováno v:
IEEE Transactions on Electron Devices. 70:2431-2436
Autor:
Arsalan Pourkabirian, Jörgen Stenarson, Giuseppe Moschetti, Niklas Wadefalk, Eunjung Cha, Jan Grahn
Publikováno v:
IEEE Electron Device Letters. 41:1005-1008
This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of $112~\mu \text{W}$ . This result was obtained by using 100-nm gate length
Autor:
Jörgen Stenarson, Niklas Wadefalk, Giuseppe Moschetti, Eunjung Cha, Jan Grahn, Arsalan Pourkabirian
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This paper reports on ultra-low power 4–8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-
Autor:
Jan Grahn, Joel Schleeh, Eunjung Cha, Niklas Wadefalk, Arsalan Pourkabirian, Silvia Tuzi, Giuseppe Moschetti, Per-Åke Nilsson
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. :1-10
We present two monolithic microwave integrated circuit (MMIC) cryogenic broadband low-noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility transistor technology for the frequency range of 0.3–14 and 16–28 GHz. The 0.
Autor:
Joel Schleeh, Arsalan Pourkabirian, David Niepce, Jan Grahn, Isabel Harrysson Rodrigues, Giuseppe Moschetti, Thilo Bauch
Publikováno v:
2019 Compound Semiconductor Week (CSW).
This work addresses the angular dependence of DC properties in InP HEMT devices under the influence of applied static magnetic field at 2 K. When kept at an angle 90 degrees towards a magnetic field of 14 T, the maximum output drain current Ids was r
Autor:
David Niepce, Isabel Harrysson Rodrigues, Thilo Bauch, Giuseppe Moschetti, Joel Schleeh, Arsalan Pourkabirian, Jan Grahn
Publikováno v:
AIP Advances, Vol 9, Iss 8, Pp 085004-085004-4 (2019)
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19b6e6b4b617f560ab927a5501355de6
Autor:
Matthias Seelmann-Eggebert, F. Schafer, Michael Schlechtweg, Mikko Kotiranta, Arnulf Leuther, Fabian Thome, Matthias Ohlrogge, Giuseppe Moschetti, Jens Goliasch, G. Wieching, Oliver Ambacher, Beatriz Aja
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:3139-3150
An investigation of metamorphic high electron mobility transistor stability at cryogenic temperature is presented in this paper. Unlike in the case of two-finger transistors, the measurements of cooled four-finger devices with large gate widths exhib
Autor:
D. Bruch, B. Baldischweiler, Giuseppe Moschetti, Matthias Seelmann-Eggebert, Oliver Ambacher, Beatriz Aja, Michael Schlechtweg, Hermann Massler
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 28:684-697
In this paper, we discuss the experimental determination of noise parameters for high-electron-mobility transistor (HEMT) devices and analyze the problems encountered with conventional extraction techniques. HEMT devices are distinguished by a very s
Autor:
Eunjung Cha, Giuseppe Moschetti, Jan Grahn, Niklas Wadefalk, Silvia Tuzi, Yu-lung Tang, Per-Åke Nilsson, Joel Schleeh, Arsalan Pourkabirian, Jacob Kooi
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
A cryogenic low noise amplifier that operates across the E and W-bands, from 65 GHz to 116 GHz, has been developed using 0.1-μm InP HEMT technology. Such wideband performance makes this work suitable for the ALMA telescope where two of its bands, 67