Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Giuseppe Mauromicale"'
Autor:
Giuseppe Mauromicale, Alessandro Sitta, Michele Calabretta, Salvatore Massimo Oliveri, Gaetano Sequenzia
Publikováno v:
Applied Sciences, Vol 11, Iss 18, p 8302 (2021)
New technological and packaging solutions are more and more being employed for power semiconductor switches in an automotive environment, especially the SiC- and GaN-based ones. In this framework, new front-end and back-end solutions have been develo
Externí odkaz:
https://doaj.org/article/a0de6dee00804a36991c93670eb9ef65
Autor:
Alessandro Sitta, Giuseppe Mauromicale, Marco Alfio Torrisi, Gaetano Sequenzia, Giuseppe D’Arrigo, Michele Calabretta
Publikováno v:
2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0115a10c70559329c33a6280a9f14f56
https://doi.org/10.1109/eurosime56861.2023.10100749
https://doi.org/10.1109/eurosime56861.2023.10100749
Autor:
Giuseppe Mauromicale, Michele Calabretta, Giuseppe Scarcella, Giacomo Scelba, Alessandro Sitta
Publikováno v:
Journal of Electronic Packaging. 145
Power converters and semiconductor devices are spreading their application fields, due to new renewable energy and automotive frameworks. In the electrified vehicles context, the even more stringent requirements, both in terms of performances and rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa8a53d10c9b515b618a3b1987807ac
https://doi.org/10.1115/1.4056413
https://doi.org/10.1115/1.4056413
Autor:
Michele Calabretta, Alessandro Sitta, Giuseppe Mauromicale, Francesco Rundo, Gaetano Sequenzia, Angelo Alberto Messina
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0916ff79ef8d5e7c3768ceb307ffd83c
https://doi.org/10.1109/asdam55965.2022.9966752
https://doi.org/10.1109/asdam55965.2022.9966752
Autor:
Alessandro Sitta, Giuseppe Mauromicale, Giovanni Corrente, Angelo Alberto Messina, Francesco Rundo, Michele Calabretta, Gaetano Sequenzia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5102d83c0e4d714c6af02485c7173f89
https://hdl.handle.net/20.500.11769/540621
https://hdl.handle.net/20.500.11769/540621
Autor:
Alessandro Sitta, Santi Agatino Rizzo, Marco Papaserio, Daniela Cavallaro, Marco Renna, Vittorio Giuffrida, Gaetano Bazzano, Michele Calabretta, Giuseppe Mauromicale, Alessandra Manzitto
Publikováno v:
2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
The high power demanding in many emerging power electronic applications requires innovative solutions in semiconductor field. One of the possible keys to satisfy this requirement is the use of more paralleled devices. For traction applications, paral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec86ad9f2c320abf303a153fb54c4959
https://doi.org/10.1109/eurosime52062.2021.9410856
https://doi.org/10.1109/eurosime52062.2021.9410856
Autor:
Alessandro Sitta, Gaetano Sequenzia, Marco Renna, Giuseppe Mauromicale, Angelo Alberto Messina, Michele Calabretta
Nowadays, solder reliability in new power electronic packages is an important research topic. Therefore, it is of paramount importance to properly understand and model the material behaviour and to develop a calculation model to predict reliability p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e4f57e663dd2bdeade087506d214f15
http://hdl.handle.net/20.500.11769/509103
http://hdl.handle.net/20.500.11769/509103
Autor:
Giuseppe, Mauromicale, Cascio Alessandra, Papaserio Marco, Cavallaro Daniela Grazia, Bazzano Gaetano, Alberto, Messina Angelo, Salvatore, Patan��, Michele, Calabretta, Alessandro, Sitta
The Silicon Carbide (SiC) semiconductor material is playing a fundamental role in the development of new power modules. Due to its excellent physical properties, the power devices based on this novel compound improve the traction inverter performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28943d1ea0c1bcb878a4927a15988044
http://hdl.handle.net/11570/3213598
http://hdl.handle.net/11570/3213598
Autor:
Giovanni Susinni, Rosario Scollo, Filadelfo Fusillo, Agatino Palermo, Nunzio Salerno, Giuseppe Mauromicale, Angelo Raciti, Santi Agatino Rizzo
In this paper, on-state dynamic drain source resistance (R DS(ON) ) phenomenon in GaN based power switches is analyzed. Dynamic R DS(ON) may increase the power losses in converters, thus reducing the benefits of using GaN power devices in this field.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e2bd315eb51be6bccd5a64b3e53046f
http://hdl.handle.net/20.500.11769/489110
http://hdl.handle.net/20.500.11769/489110
Autor:
Alessandro Sitta, Salvatore Massimo Oliveri, Michele Calabretta, Gaetano Sequenzia, Giuseppe Mauromicale
Publikováno v:
Applied Sciences, Vol 11, Iss 8302, p 8302 (2021)
Applied Sciences
Volume 11
Issue 18
Applied Sciences
Volume 11
Issue 18
New technological and packaging solutions are more and more being employed for power semiconductor switches in an automotive environment, especially the SiC- and GaN-based ones. In this framework, new front-end and back-end solutions have been develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebcb78b563b166e06ba4e5b687cf273b
https://doi.org/10.3390/app11188302
https://doi.org/10.3390/app11188302