Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Giuseppe C. Tettamanzi"'
Autor:
Ashour Sliow, Zhi Ma, Gaetano Gargiulo, David Mahns, Damia Mawad, Paul Breen, Marcus Stoodley, Jessica Houang, Rhiannon Kuchel, Giuseppe C. Tettamanzi, Richard D. Tilley, Samuel J. Frost, John Morley, Leonardo Longo, Antonio Lauto
Publikováno v:
Advanced Science, Vol 6, Iss 11, Pp n/a-n/a (2019)
Abstract An original wireless stimulator for peripheral nerves based on a metal loop (diameter ≈1 mm) that is powered by a transcranial magnetic stimulator (TMS) and does not require circuitry components is reported. The loop can be integrated in a
Externí odkaz:
https://doaj.org/article/da26d1cbfb7d498f88509c40b28b82c7
Autor:
Alan Gardin, Jeremy Bourhill, Vincent Vlaminck, Christian Person, Christophe Fumeaux, Vincent Castel, Giuseppe C. Tettamanzi
Publikováno v:
Physical Review Applied. 19
The interaction between microwave photons and magnons is well understood and originates from the Zeeman coupling between spins and a magnetic field. Interestingly, the magnon/photon interaction is accompanied by a phase factor which can usually be ne
Publikováno v:
Physical Review B. 105
Non-adiabatic quantum effects, often experimentally observed in semiconductors nano-devices such as single-electron pumps operating at high frequencies, can result in undesirable and uncontrollable behaviour. However, when combined with the valley de
Autor:
Alessandro Rossi, Mikko Möttönen, Janis Timoshenko, Jevgeny Klochan, Andrew S. Dzurak, Vyacheslavs Kashcheyevs, Fay E. Hudson, Sven Rogge, Giuseppe C. Tettamanzi
Publikováno v:
NANO LETTERS. 18(7):4141-4147
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dot
Autor:
Giuseppe C. Tettamanzi
Publikováno v:
Entropy, Vol 21, Iss 7, p 676 (2019)
Entropy
Entropy
Silicon-based materials have been the leading platforms for the development of classical information science and are now one of the major contenders for future developments in the field of quantum information science. In this short review paper, whil
Autor:
Zhi Ma, Richard D. Tilley, Rhiannon P. Kuchel, Giuseppe C. Tettamanzi, David A. Mahns, Paul P. Breen, Jessica Houang, Ashour Sliow, Samuel J Frost, Damia Mawad, Leonardo Longo, John W. Morley, Antonio Lauto, Gaetano D. Gargiulo, Marcus A. Stoodley
Publikováno v:
Advanced Science, Vol 6, Iss 11, Pp n/a-n/a (2019)
Advanced Science
Advanced Science
An original wireless stimulator for peripheral nerves based on a metal loop (diameter ≈1 mm) that is powered by a transcranial magnetic stimulator (TMS) and does not require circuitry components is reported. The loop can be integrated in a chitosan
Publikováno v:
Scientific Reports
Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable orbital level sp
Autor:
Giuseppe C. Tettamanzi, Michelle Y. Simmons, Martin Fuechsle, Sven Rogge, S. J. Hile, Matthew House
Publikováno v:
ACS nano. 11(3)
Giuseppe Carlo Tettamanzi, Samuel James Hile, Matthew Gregory House, Martin Fuechsle, Sven Rogge, and Michelle Y. Simmons
Autor:
Sven Rogge, S. J. Hile, Martin Fuechsle, Michelle Y. Simmons, Matthew House, Giuseppe C. Tettamanzi
The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with nanosecond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20b4cf23f86dedeb40de630818f4695b
http://arxiv.org/abs/1702.08569
http://arxiv.org/abs/1702.08569
Autor:
J. Verduijn, G. P. Lansbergen, Sven Rogge, Serge Biesemans, M. Blaauboer, Giuseppe C. Tettamanzi, Nadine Collaert
Publikováno v:
Nano Letters. 10:455-460
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are t