Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Giuseppe Alessio Verni"'
Autor:
James C. Greer, Brenda Long, Peter Schüffelgen, Martin Lanius, Giuseppe Alessio Verni, Farzan Gity, Justin D. Holmes, Gregor Mussler, Detlev Grützmacher
Bismuth has been identified as a material of interest for electronic applications due to its extremely high electron mobility and quantum confinement effects observed at nanoscale dimensions. However, it is also the case that Bi nanostructures are re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1926bd0c017054ecdfbd80553c65f5f6
https://hdl.handle.net/10468/7121
https://hdl.handle.net/10468/7121
Autor:
Detlev Grützmacher, Christian König, Peter Schüffelgen, Lida Ansari, Farzan Gity, Justin D. Holmes, Giuseppe Alessio Verni, Gregor Mussler, Martin Lanius, James C. Greer, Brenda Long
Quantum confinement in a semimetal thin film such as bismuth (Bi) can lead to a semimetal-to-semiconductor transition which allows for the use of semimetals as semiconductors when patterned at nanoscale lengths. Bi native oxide on Bi thin film grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6cc7a24ce4dd1a1e8c274c7a3ef4a6b
https://hdl.handle.net/10468/5725
https://hdl.handle.net/10468/5725
Autor:
Anushka S. Gangnaik, John F. O'Connell, Ray Duffy, Justin D. Holmes, Michael A. Morris, Giuseppe Alessio Verni, Nikolay Petkov, Brenda Long, Yordan M. Georgiev, Gerard P. McGlacken, Maryam Shayesteh
Publikováno v:
ACS Applied Materials & Interfaces. 7:15514-15521
This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 × 10(20) atoms cm(-3). Characterization of doped structures after the MLD process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc23d293d5b962525326bd720b61b6d7
https://doi.org/10.1021/acsami.5b03768
https://doi.org/10.1021/acsami.5b03768
Autor:
John F. O'Connell, David McNulty, Christoph Marschner, Justin D. Holmes, Peter Poelt, Mohammad Aghazadeh Meshgi, Giuseppe Alessio Verni, Colm O'Dwyer, Subhajit Biswas, Fionán Davitt, Ilse Letofsky-Papst
New oligosilylgermane compounds with weak Ge–H bonds have been used as precursors for the rapid synthesis of germanium (Ge) nanowires in high yields (>80%), via a solution–liquid–solid (SLS) mechanism, using indium (In) nanoparticles as a seedi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f01d4c9780e08045f459c6cb3eb321a0
https://hdl.handle.net/10468/4243
https://hdl.handle.net/10468/4243