Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Giulio Borghello"'
Autor:
Markus Piller, Rafael Ballabriga, Franco Nahuel Bandi, Giulio Borghello, Davide Ceresa, Risto Pejasinovic, Viros Sriskaran, Alicja Michalowska-Forsyth, Bernd Deutschmann
Publikováno v:
2022 Austrochip Workshop on Microelectronics (Austrochip).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3104a57af42b486747d443bc19c2d4d
https://doi.org/10.1109/austrochip56145.2022.9940783
https://doi.org/10.1109/austrochip56145.2022.9940783
Autor:
Stefano Michelis, Sebastiano Costanzo, Giulio Borghello, Henri D. Koch, Gennaro Termo, Daniel M. Fleetwood, Federico Faccio
Publikováno v:
IEEE Transactions on Nuclear Science. 68:573-580
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::949224385db6b917c30bc86958c16b6e
https://doi.org/10.1109/tns.2021.3062622
https://doi.org/10.1109/tns.2021.3062622
Autor:
Christian Enz, Chun-Min Zhang, Giulio Borghello, Federico Faccio, Farzan Jazaeri, Andrea Baschirotto, Serena Mattiazzo
Publikováno v:
IEEE Transactions on Nuclear Science. 66:38-47
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of ${n}$ MOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual ${n}$ MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c723be753ec08317aa348ef092f09829
https://doi.org/10.1109/tns.2018.2878105
https://doi.org/10.1109/tns.2018.2878105
Autor:
Christian Enz, Giulio Borghello, Chun-Min Zhang, Andrea Baschirotto, Serena Mattiazzo, Farzan Jazaeri
This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface-trapped charges, the mobile ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ebf99d1f85012fc51251d337972deaf
http://cds.cern.ch/record/2810013
http://cds.cern.ch/record/2810013
Autor:
Stefano Michelis, Giulio Borghello, Federico Faccio, F. Marquez, F. Munoz, F. R. Palomo, Edoardo Lerario, G. Termo, H.D. Koch
Publikováno v:
Microelectronics Reliability. 116:114016
We studied the radiation response of 3 different 65 CMOS planar technologies at the ultra-high doses expected to be reached in the HL-LHC, the upgraded large hadron collider of CERN. All the processes studied are sensitive to radiation and show simil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31eb3a5c099963f95c6372ce055ff9b
https://doi.org/10.1016/j.microrel.2020.114016
https://doi.org/10.1016/j.microrel.2020.114016
Autor:
Chun-Min Zhang, Giulio Borghello, Christian Enz, Andrea Baschirotto, Serena Mattiazzo, Farzan Jazaeri
Publikováno v:
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC).
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-lumino
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5eb83798a909b391b32516d09b963d68
https://doi.org/10.1109/nssmic.2018.8824379
https://doi.org/10.1109/nssmic.2018.8824379
Autor:
Chun-Min Zhang, Giulio Borghello, Christian Enz, Andrea Baschirotto, Farzan Jazaeri, Serena Mattiazzo
Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6a5475879e2155c4d43f28af1af9aed
http://hdl.handle.net/10281/290449
http://hdl.handle.net/10281/290449
Autor:
Daniel M. Fleetwood, Pan Wang, Alessandro Paccagnella, Federico Faccio, En Xia Zhang, Stefano Bonaldo, Simone Gerardin, Stefano Michelis, Huiqi Gong, Edoardo Lerario, Giulio Borghello, Ronald D. Schrimpf
The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is strongly gate-length dependent. The current drive decreases during irradiation, and the threshold voltage often shifts significantly during irradiation and/or high-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::244b4740161a0257623f387db133078c
https://hdl.handle.net/11577/3256101
https://hdl.handle.net/11577/3256101
Autor:
Ronald D. Schrimpf, Alessandro Paccagnella, Edoardo Lerario, Szymon Kulis, Daniel M. Fleetwood, Federico Faccio, Simone Gerardin, Stefano Bonaldo, Stefano Michelis, Giulio Borghello
The radiation response of complementary metal–oxide–semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65cb68d9de3c1d1374cb70fbdd2807d9
http://hdl.handle.net/11390/1139283
http://hdl.handle.net/11390/1139283
Autor:
A. Pezzotta, Farzan Jazaeri, Serena Mattiazzo, Giulio Borghello, Federico Faccio, Claudio Bruschini, Andrea Baschirotto, Christian Enz, Chun-Min Zhang
This paper investigates the radiation tolerance of 28-nm bulk ${n}$ and ${p}$ MOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ed12b95cdad9d283c2760e80fdaa12c
http://hdl.handle.net/10446/187138
http://hdl.handle.net/10446/187138