Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Giulia Marcello"'
The starting point is the acquisition of DC data, as usual for drawing the socalled LIV plot, as shown, where current I, optical power P out and the externally applied voltage Vext are drawn together.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef5f0e87696ec11a3f46f73dcbd90eb2
https://doi.org/10.1016/b978-1-78548-154-3.50005-7
https://doi.org/10.1016/b978-1-78548-154-3.50005-7
Autor:
Laurent Béchou, Daniel T. Cassidy, Yves Danto, Yannick Deshayes, Mitsuo Fukuda, Samuel K.K. Lam, Giulia Marcello, Laurent Mendizabal, Giovanna Mura, Yves Ousten, Valerio Sanna Valle, Massimo Vanzi, Frédéric Verdier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac20bdaac777bf9e7978008e289f0968
https://doi.org/10.1016/b978-1-78548-154-3.50011-2
https://doi.org/10.1016/b978-1-78548-154-3.50011-2
Publikováno v:
Microelectronics Reliability. :294-298
Quiescent current (IDDQ) test demonstrated over years its effectiveness in identifying the ICs failure root causes. In this paper three cases study are presented, all based on the use of IDDQ test during Emission Microscopy (EMMI). The DUTs analyzed,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d51d752c0f868282370482b552ad548
https://doi.org/10.1016/j.microrel.2018.06.079
https://doi.org/10.1016/j.microrel.2018.06.079
Autor:
Massimo Vanzi, Giovanna Mura, Simon Joly, Giulia Marcello, Yannick Deshayes, Laurent Bechou, G. Le Galès
Publikováno v:
Microelectronics Reliability. :579-583
The revision of the classic Hakki-Paoli method shows that the a priori knowledge of facet reflectivity and confinement factor is not required for measuring optical gain in semiconductor laser and LED emitters. Moreover, a recently proposed new formul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c828084dcfa9aff8b34d9c6f5551ce
https://doi.org/10.1016/j.microrel.2017.07.060
https://doi.org/10.1016/j.microrel.2017.07.060
Publikováno v:
Microelectronics Reliability. 64:617-622
Forward and reverse HBM, MM, CDM ESD tests have been performed on 850-nm VCSELs, together with EOS and overpower test. The physical analysis of the tested devices showed a variety of damages not easily correlated to the measured electro-optical degra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f31aec1fd99614d39f4855f194a840ae
https://doi.org/10.1016/j.microrel.2016.07.023
https://doi.org/10.1016/j.microrel.2016.07.023
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:158-163
A double-peaked spectrum in some distributed feedback laser diodes is demonstrated to relate to axially confined catastrophic optical damage (COD), followed by the excitation of a transversal optical mode. The melting-regrowth kinetics of CODs also r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f8cc42197d171524511b5d023b7e135
https://doi.org/10.1109/tdmr.2016.2539242
https://doi.org/10.1109/tdmr.2016.2539242
Publikováno v:
Microelectronics Reliability. 55:1736-1740
A recent model for laser diodes was applied to the decomposition of the experimental characteristics of several laser diodes into their fundamental components. This pointed out a problem involving the ideality factor and the clamp voltage. The two qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce24211cba4aad648e0e074830d6b417
https://doi.org/10.1016/j.microrel.2015.06.027
https://doi.org/10.1016/j.microrel.2015.06.027
Autor:
Giulia Marcello, François Laruelle, Simon Joly, Adèle Morisset, Guillaume Pedroza, Laurent Bechou, Germain Le Gales
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXV.
Using InGaAs/AlGaAs 1060nm commercial Laser Diodes (LDs) and Laser Diode Modules (LDMs) under high current (> 2A) and nanosecond pulsed conditions offers a large flexibility for fiber Laser seeding applications. Nevertheless, the behavior and long te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e53f3c950caaf13a139cf813c9e0b8d
https://doi.org/10.1117/12.2252428
https://doi.org/10.1117/12.2252428
Publikováno v:
Microelectronics Reliability. 53:1538-1542
Current and/or photon crowding are indicted as a risk factor for high modulation speed laser diodes. A prompting field failure case is complemented with detailed the analysis of the DC measurements, highlighting the role of the transcharacteristics,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80e4deca4f3a097d7492abcfc609a396
https://doi.org/10.1016/j.microrel.2013.07.114
https://doi.org/10.1016/j.microrel.2013.07.114
Autor:
Vanzi, Massimo, Giulia, Marcello, Mura, Giovanna, Le Gales, Germain, Joly, Simon, Deshayes, Yannick, Bechou, Laurent
Publikováno v:
ISROS 2016
ISROS 2016, Jun 2016, Otwok, Poland
ISROS 2016, Jun 2016, Otwok, Poland
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c72063da062d3096bbd51386b8e93b51
https://hal.archives-ouvertes.fr/hal-01720721
https://hal.archives-ouvertes.fr/hal-01720721