Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Giulia Broglia"'
Recently glasses have been considered as potential candidates for solid-state batteries applications due to the peculiar properties that they show if compared to crystalline ones. In this work, the dynamic properties of copper (Cu1 +) and lithium (Li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1b2b45bea3c58a70fa87bbb1229bc6c
https://hdl.handle.net/11380/1149009
https://hdl.handle.net/11380/1149009
Publikováno v:
Journal of Non-Crystalline Solids. 403:53-61
Lithium vanado-phosphate glasses have been designated as possible cathode material for the next generation of solid state batteries, due to their high conductivity and mixed electronic–ionic conducting behaviours, which derive from the small polaro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72707e7a300877edb0b7cb772bc570ca
https://doi.org/10.1016/j.jnoncrysol.2014.07.003
https://doi.org/10.1016/j.jnoncrysol.2014.07.003
Publikováno v:
Molecular Dynamics Simulations of Disordered Materials ISBN: 9783319156743
In the last years, glass research focused particular attention on transition metal oxide containing systems for semi-conductive applications, for instance glasses for solid-state devices and secondary batteries. In glass matrices, transition metal io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c8c8dae3ed9efd11507dc47cdb4c9e3
https://doi.org/10.1007/978-3-319-15675-0_8
https://doi.org/10.1007/978-3-319-15675-0_8
Autor:
K. Goss, L. N. Fomicheva, Pedro Prieto, Silvia Karthäuser, N. Glezos, Susagna Ricart, K. H. Michel, V. Rouco, Carola Meyer, Songhak Yoon, Ulrich Simon, S. Ye, Masahiro Tada, Sònia Estradé, Shoji Ishibashi, T. Tungsurat, M. E. Gómez, Mohammad Reza Golobostanfard, Giulia Broglia, Taichi Kosugi, Rainer Jany, Luca Larcher, Thierry Straessle, F. M. Peeters, A. Thatribud, Victor Moshchalkov, P. F. Chen, L. Covaci, M. A. Wilde, Sascha Populoh, C. Spudat, D. Velessiotis, Claus M. Schneider, Alberto Pomar, Paulo R. F. Rocha, E. Longo, P. Argitis, A. Soltow, Isao Tanaka, Dominik Urselmann, Timo Schena, Jaume Gazquez, J. Gutierrez, Stefan Blügel, Hideyuki Yasuda, Gervasi Herranz, J. A. Hirschfeld, Gustav Bihlmayer, Adam W. Franz, Yohei Miyauchi, Pengxiang Xu, Masato Yoshiya, B. W. Zhi, María Jesús Martínez-Lope, Monia Montorsi, José Antonio Alonso, Andrey Shkabko, Roman Nowak, J. Mannhart, D. Chrobak, Fei Zeng, A. I. Velichkov, D. Chataigner, R. Córdoba, Dariusz Chrobak, Christoph Richter, Vladimir Pomjakushin, Werner Dietsche, H. Lustfeld, Christian Colliex, Adam Busiakiewicz, M. Brasse, T. Wyrobek, F. de la Peña, A. A. Sorokin, Jing Yang, Maria Varela, Michael Paßens, Qian Chen, Ch. Heyn, Johan Vanacken, Yisong Lin, A. V. Salamatin, Koichi Niihara, Christoph Stampfer, D. Nasr Esfahani, L. F. Wang, P. Dimitrakis, Stefan C. J. Meskers, J. A Varela, Felip Sandiumenge, J. M. Rebled, Ingrid C. Infante, R. Nowak, Rainer Waser, Anna Palau, A. M. Douvas, Teresa Puig, Hossein Abdizadeh, S. Karthäuser, A. Epping, Roger Guzmán, W. W. Gerberich, Anke Weidenkaff, Thomas Müller, Hans Boschker, M. Budzynski, A. Boonthummo, F. Peiró, Michael Walls, A. Z Simões, R. Waser, Zhishun Wang, G. K. Ryasny, Marisa Medarde, R. Vlad, U. Wichmann, Takashi Miyake, Manuel J. Schmidt, Jochen Mannhart, Anna Llordes, Laurent Chaput, Hiromasa Ohnishi, William W Gerberich, Xavier Obradors, C. Thomsen, M. Müller, L. Houben, Josep Fontcuberta, Dago M. de Leeuw, Andrea Padovani, Leyre Sagarna, Asal Kiazadeh, Marcel Manheller, M. A Ramírez, Stefan Trellenkamp, Stephan Engels, Mariona Coll, Kerstin Blech, Henrique L. Gomes, W. B. Wu, Sizhao Li, A. V. Tsvyashchenko, Jordi Arbiol, Alexandra E. Maegli, César Magén, Janina Maultzsch, X. L. Tan, T. Pengpan, A. V. Nikolaev, Florencio Sánchez, Atsushi Togo, Kiyoyuki Terakura, O. I. Kochetov, Christa S. Barkschat, D. Grundler, Guy Deutscher
Publikováno v:
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de03fc5f82b9dcd5a1bc5884a9f8dbfe
https://doi.org/10.1002/9783527667703.ch66
https://doi.org/10.1002/9783527667703.ch66
Autor:
Giulia Broglia, Gennadi Bersuker, Luca Larcher, Monia Montorsi, Guido Ori, Luca Vandelli, Andrea Padovani, Paolo Pavan
Publikováno v:
2011 IEEE International Electron Devices Meeting (IEDM)
2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, United States. pp.17.5.1-17.5.4, ⟨10.1109/IEDM.2011.6131574⟩
2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, United States. pp.17.5.1-17.5.4, ⟨10.1109/IEDM.2011.6131574⟩
In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91cc854c0f02dc6fb764be58efe24f5a
https://hal.archives-ouvertes.fr/hal-02349309
https://hal.archives-ouvertes.fr/hal-02349309
Publikováno v:
Università degli studi di Modena e Reggio Emilia-IRIS
Modelling and Simulation in Materials Science and Engineering
Modelling and Simulation in Materials Science and Engineering, IOP Publishing, 2014, 22 (6), pp.065006. ⟨10.1088/0965-0393/22/6/065006⟩
Modelling and Simulation in Materials Science and Engineering
Modelling and Simulation in Materials Science and Engineering, IOP Publishing, 2014, 22 (6), pp.065006. ⟨10.1088/0965-0393/22/6/065006⟩
HfO2 is widely investigated as the favoured material for resistive RAM device implementation. The structural features of HfO2 play a fundamental role in the switching mechanisms governing resistive RAM operations, and a comprehensive understanding of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c26767a82e33dd06a59620f220e90b59
https://doi.org/10.1088/0965-0393/22/6/065006
https://doi.org/10.1088/0965-0393/22/6/065006