Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Gisu Youm"'
Autor:
Sojin Jeong, Sangwoo Han, Ho-Jun Lee, Deokjoon Eom, Gisu Youm, Yejoo Choi, Seungjun Moon, Kyungjin Ahn, Jinju Oh, Changhwan Shin
Publikováno v:
IEEE Access, Vol 9, Pp 116953-116961 (2021)
A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO2-based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS
Externí odkaz:
https://doaj.org/article/8a24f2572cf74700a250f05d17324054
Autor:
Sangwoo Han, Changhwan Shin, Seungjun Moon, Gisu Youm, Ho-Jun Lee, Jinju Oh, Sojin Jeong, Deokjoon Eom, Kyungjin Ahn, Yejoo Choi
Publikováno v:
IEEE Access. 9:116953-116961
A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO2-based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa4e1426827be92b59579e7d00413d4d
https://doi.org/10.1109/access.2021.3106331
https://doi.org/10.1109/access.2021.3106331