Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Girish U. Kamble"'
Autor:
Somnath S. Kundale, Girish U. Kamble, Pradnya P. Patil, Snehal L. Patil, Kasturi A. Rokade, Atul C. Khot, Kiran A. Nirmal, Rajanish K. Kamat, Kyeong Heon Kim, Ho-Myoung An, Tukaram D. Dongale, Tae Geun Kim
Publikováno v:
Nanomaterials, Vol 13, Iss 12, p 1879 (2023)
Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-
Externí odkaz:
https://doaj.org/article/f163bbe5bf2444ac9b2b1865d872e8c0
Publikováno v:
ACS Applied Electronic Materials. 5:2454-2481
Autor:
Akhilesh P. Patil, Chetan C. Revadekar, Girish U. Kamble, Somnath S. Kundale, Sunil J. Kadam, Santosh S. Sutar, Pramod J. Patil, Tukaram D. Dongale
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:23390-23403
Autor:
Tukaram D. Dongale, M. M. Karanjkar, Sachin A. Pawar, Girish U. Kamble, Dipali S. Patil, Rajanish K. Kamat, Nitin P. Shetake, Marius K. Orlowski, A.M. Teli, Suhas D. Yadav, Pramod S. Patil, Jae C. Shin
Publikováno v:
International Nano Letters, Vol 8, Iss 4, Pp 263-275 (2018)
In the present investigation, we have experimentally demonstrated the coexistence of filamentary and homogeneous resistive switching mechanisms in single Al/MnO2/SS thin film metal–insulator–metal device. The voltage-induced resistive switching l
Autor:
A.M. Teli, Ashkan Vakilipour Takaloo, Tae Whan Kim, Youngjin Kim, Tukaram D. Dongale, Prashant Sonar, Deok-kee Kim, Girish U. Kamble
Publikováno v:
Journal of Alloys and Compounds. 872:159653
Mimicking synaptic plasticity is a key to harnessing the power of the brain. In the present work, manganese oxide (MnO2) thin films were developed by using the simple, low-cost hydrothermal method, and the hydrothermal deposition-time-dependent resis
Autor:
Girish U. Kamble, Somnath S. Kundale, Ho-Myoung An, Dae Yun Kang, Tae Geun Kim, Tukaram D. Dongale
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 15:2100199