Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Girish Rughoobur"'
Autor:
Robert Hay, Ranajoy Bhattacharya, Winston Chern, Girish Rughoobur, Akintunde I. Akinwande, Jim Browning
Publikováno v:
Applied Sciences, Vol 13, Iss 23, p 12807 (2023)
Vacuum transistors (VTs) are promising candidates in electronics due to their fast response and ability to function in harsh environments. In this study, several oscillator and logic gate circuit simulations using VTs are demonstrated. Silicon-gated
Externí odkaz:
https://doaj.org/article/d29568243fd34db68d5d2144d1d41fd0
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract State-of-the-art pixels for high-resolution microdisplays utilize reflective surfaces on top of electrical backplanes. Each pixel is a single fixed color and will usually only modulate the amplitude of light. With the rise of nanophotonics,
Externí odkaz:
https://doaj.org/article/e46e009000c643998fdfae739db9c870
Autor:
Girish Rughoobur, Mario DeMiguel-Ramos, José-Miguel Escolano, Enrique Iborra, Andrew John Flewitt
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract Shear mode solidly mounted resonators (SMRs) are fabricated using an inclined c-axis ZnO grown on a rough Al electrode. The roughness of the Al surface is controlled by changing the substrate temperature during the deposition process to prom
Externí odkaz:
https://doaj.org/article/a531ab8843aa4568b39d4ec22873f8b7
Autor:
Pao-Chuan Shih, Girish Rughoobur, Zachary Engel, Habib Ahmad, William Alan Doolittle, Akintunde I. Akinwande, Tomas Palacios
Publikováno v:
IEEE Electron Device Letters. 43:1351-1354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ba4686180e1cb90f37ef49afcda2dc
https://doi.org/10.1109/led.2022.3184996
https://doi.org/10.1109/led.2022.3184996
Publikováno v:
IEEE Electron Device Letters. 42:422-425
Field emitters are attracting much attention recently because of their potential for high-frequency and harsh-environment applications. Although silicon is the most studied semiconductor for field emitters, III-Nitrides are also very promising thanks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ad98a19848ba2e72bb1506f2815d9af
https://doi.org/10.1109/led.2021.3052715
https://doi.org/10.1109/led.2021.3052715
Autor:
Ranajoy Bhattacharya, Robert Hay, Mason Cannon, Nedeljko Karaulac, Girish Rughoobur, Akintunde Ibitayo Akinwande, Jim Browning
Publikováno v:
Journal of Vacuum Science & Technology B. 41:023201
Silicon gated field emitter arrays have been used as a vacuum transistor to demonstrate a 152 kHz Colpitts oscillator. The transfer and output characteristics of the 1000 × 1000 silicon arrays were measured using a collector placed ≈ 1 mm away wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea74928f8ad20739f3eef60e170053ac
https://doi.org/10.1116/6.0002272
https://doi.org/10.1116/6.0002272
Publikováno v:
Angewandte Chemie. 132:21076-21080
Electroorganic synthesis is a promising tool to design sustainable transformations and discover new reactivities. However, the added setup complexity caused by electrodes in the system impedes efficient screening of reaction conditions. Herein, we pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26efc891c2ed9e73a8aa0045fdf419e6
https://doi.org/10.1002/ange.202009819
https://doi.org/10.1002/ange.202009819
Autor:
Prashant Patil, Stephen L. Buchwald, Akintunde I. Akinwande, Zhaohong Lu, Neil Gershenfeld, Girish Rughoobur, Klavs F. Jensen, Yiming Mo
Publikováno v:
Science. 368:1352-1357
Cutting it close for radical coupling In principle, electrochemistry is an ideal method for radical coupling: One precursor oxidized at the anode pairs up with a counterpart that has been reduced at the cathode. The trouble is that either or both cou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88c7910887d938a0376ea5f8c3f3d229
https://doi.org/10.1126/science.aba3823
https://doi.org/10.1126/science.aba3823
Autor:
Isaac Wolstenholme, Akintunde I. Akinwande, Adam M. Darr, Ranajoy Bhattacharya, Mason Cannon, Andong Yue, Winston Chern, Jim Browning, Nedeljko Karaulac, Rushmita Bhattacharjee, Liz Gaffney, Girish Rughoobur, Gerardo Herrera, John McClarin, Allen L. Garner
Publikováno v:
2021 IEEE International Conference on Plasma Science (ICOPS).
High power magnetrons and crossed-field amplifiers (CFA) are advantageous in terms of power density and efficiency. However, electron beam stability in the crossed-field gap in terms of magnetic field tilt 1 , current density, and AC modulation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0170e7682b11efdfabc06dce8d207531
https://doi.org/10.1109/icops36761.2021.9588644
https://doi.org/10.1109/icops36761.2021.9588644
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
We present the emission characteristics from a single Si emitter with integrated nanowire, obtained at different pressures by the influx of gases. This is enabled by a nanopositioning stage and a sharp tungsten anode. We compared emission characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a94837305414378e1879f90891b55943
https://doi.org/10.1109/ivnc52431.2021.9600735
https://doi.org/10.1109/ivnc52431.2021.9600735