Zobrazeno 1 - 10
of 237
pro vyhledávání: '"Giovanni Verzellesi"'
Autor:
Francesca Peverini, Saba Aziz, Aishah Bashiri, Marco Bizzarri, Maurizio Boscardin, Lucio Calcagnile, Carlo Calcatelli, Daniela Calvo, Silvia Caponi, Mirco Caprai, Domenico Caputo, Anna Paola Caricato, Roberto Catalano, Roberto Cirro, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Tommaso Croci, Giacomo Cuttone, Gianpiero de Cesare, Paolo De Remigis, Sylvain Dunand, Michele Fabi, Luca Frontini, Livio Fanò, Benedetta Gianfelici, Catia Grimani, Omar Hammad, Maria Ionica, Keida Kanxheri, Matthew Large, Francesca Lenta, Valentino Liberali, Nicola Lovecchio, Maurizio Martino, Giuseppe Maruccio, Giovanni Mazza, Mauro Menichelli, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Augusto Nascetti, Stefania Pallotta, Andrea Papi, Daniele Passeri, Marco Petasecca, Giada Petringa, Igor Pis, Pisana Placidi, Gianluca Quarta, Silvia Rizzato, Alessandro Rossi, Giulia Rossi, Federico Sabbatini, Andrea Scorzoni, Leonello Servoli, Alberto Stabile, Silvia Tacchi, Cinzia Talamonti, Jonathan Thomet, Luca Tosti, Giovanni Verzellesi, Mattia Villani, Richard James Wheadon, Nicolas Wyrsch, Nicola Zema, Maddalena Pedio
Publikováno v:
Nanomaterials, Vol 14, Iss 19, p 1551 (2024)
This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have spa
Externí odkaz:
https://doaj.org/article/9eaf62f36ee14b0dbd1b62f224c8c9ad
Publikováno v:
Micromachines, Vol 13, Iss 12, p 2244 (2022)
Thanks to high-current densities and cutoff frequencies, short-channel length AlGaN/GaN HEMTs are a promising technology solution for implementing RF power amplifiers in 5G front-end modules. These devices, however, might suffer from current collapse
Externí odkaz:
https://doaj.org/article/ad9373284c1446e9aaabe9d17ab022d3
Autor:
Francesca Peverini, Marco Bizzarri, Maurizio Boscardin, Lucio Calcagnile, Mirco Caprai, Anna Paola Caricato, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Giacomo Cuttone, Sylvain Dunand, Livio Fanò, Benedetta Gianfelici, Omar Hammad, Maria Ionica, Keida Kanxheri, Matthew Large, Giuseppe Maruccio, Mauro Menichelli, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Stefania Pallotta, Andrea Papi, Daniele Passeri, Marco Petasecca, Giada Petringa, Igor Pis, Gianluca Quarta, Silvia Rizzato, Alessandro Rossi, Giulia Rossi, Andrea Scorzoni, Cristian Soncini, Leonello Servoli, Silvia Tacchi, Cinzia Talamonti, Giovanni Verzellesi, Nicolas Wyrsch, Nicola Zema, Maddalena Pedio
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3466 (2022)
In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector
Externí odkaz:
https://doaj.org/article/ab704b136c1a43a29ac167622ab0feee
Autor:
Giovanni Verzellesi
Publikováno v:
Micromachines, Vol 13, Iss 3, p 403 (2022)
Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields of human activities [...]
Externí odkaz:
https://doaj.org/article/26417f35f36a4e869924d42215eedc44
Autor:
Jeremy Alexander Davis, Maurizio Boscardin, Michele Crivellari, Livio Fanò, Matthew Large, Mauro Menichelli, Arianna Morozzi, Francesco Moscatelli, Maria Movileanu-Ionica, Daniele Passeri, Marco Petasecca, Mauro Piccini, Alessandro Rossi, Andrea Scorzoni, Bailey Thompson, Giovanni Verzellesi, Nicolas Wyrsch
Publikováno v:
Frontiers in Physics, Vol 8 (2020)
There is currently a renewed interest in hydrogenated amorphous silicon (a-Si:H) for use in particle detection applications. Whilst this material has been comprehensively investigated from a numerical perspective within the context of photovoltaic an
Externí odkaz:
https://doaj.org/article/3f44bb929e294590acdeb50978835cf9
Autor:
Mauro Menichelli, Marco Bizzarri, Maurizio Boscardin, Mirco Caprai, Anna Paola Caricato, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Ilaria Cupparo, Giacomo Cuttone, Silvain Dunand, Livio Fanò, Omar Hammad Alì, Maria Ionica, Keida Kanxheri, Matthew Large, Giuseppe Maruccio, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Andrea Papi, Daniele Passeri, Marco Petasecca, Silvia Rizzato, Alessandro Rossi, Andrea Scorzoni, Leonello Servoli, Cinzia Talamonti, Giovanni Verzellesi, Nicolas Wyrsch
Publikováno v:
Instruments, Vol 5, Iss 4, p 32 (2021)
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide v
Externí odkaz:
https://doaj.org/article/694fdaa10eb94af8930405816cf17b58
Publikováno v:
Micromachines, Vol 12, Iss 6, p 709 (2021)
The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. Due to the introduction of trap levels in the GaN ba
Externí odkaz:
https://doaj.org/article/fdf2e3b467b24b1d9767ca0fe9bea2ff
Autor:
Marco Calciati, Michele Goano, Francesco Bertazzi, Marco Vallone, Xiangyu Zhou, Giovanni Ghione, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Enrico Bellotti, Giovanni Verzellesi, Dandan Zhu, Colin Humphreys
Publikováno v:
AIP Advances, Vol 4, Iss 6, Pp 067118-067118-23 (2014)
Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural fe
Externí odkaz:
https://doaj.org/article/3f256fc1a6b74d5487ad5fdbe17a7a04
Autor:
Alessandro Chini, Nicolò Zagni, Giovanni Verzellesi, Marcello Cioni, Giovanni Giorgino, Maria Concetta Nicotra, Maria Eloisa Castagna, Ferdinando Iucolano
Publikováno v:
IEEE Electron Device Letters. 44:915-918
Autor:
Matteo Meneghini, Nicola Roccato, Francesco Piva, Carlo De Santi, Matteo Buffolo, Camille Haller, Jean-Francois Carlin, Nicolas Grandjean, Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Giovanni Verzellesi, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.