Zobrazeno 1 - 10
of 443
pro vyhledávání: '"Giovanni Isella"'
Autor:
Oliver Sagi, Alessandro Crippa, Marco Valentini, Marian Janik, Levon Baghumyan, Giorgio Fabris, Lucky Kapoor, Farid Hassani, Johannes Fink, Stefano Calcaterra, Daniel Chrastina, Giovanni Isella, Georgios Katsaros
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivi
Externí odkaz:
https://doaj.org/article/8c18e51a50e641fe81b8b7c0d94b2652
Autor:
Marco Valentini, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason Jung, Stefano Calcaterra, Andrea Ballabio, Juan Aguilera Servin, Kushagra Aggarwal, Marian Janik, Thomas Adletzberger, Rubén Seoane Souto, Martin Leijnse, Jeroen Danon, Constantin Schrade, Erik Bakkers, Daniel Chrastina, Giovanni Isella, Georgios Katsaros
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as t
Externí odkaz:
https://doaj.org/article/131573f81a0d4811bcce68cd01d43d0e
Autor:
Alexandre Heintz, Bouraoui Ilahi, Alexandre Pofelski, Gianluigi Botton, Gilles Patriarche, Andrea Barzaghi, Simon Fafard, Richard Arès, Giovanni Isella, Abderraouf Boucherif
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Many complex devices rely on epitaxial growth with high crystallinity and accurate composition. Here authors report epitaxial growth of Ge on deep etched porous Si pillars to provide a fully compliant substrate enabling elastic relaxation of defect f
Externí odkaz:
https://doaj.org/article/b0302eb751114196bc93e20db9171c4c
Autor:
Thi Hao Nhi Nguyen, Natnicha Koompai, Victor Turpaud, Miguel Montesinos-Ballester, Jacopo Frigerio, Stefano Calcaterra, Andrea Ballabio, Xavier Le Roux, Jean- René Coudevylle, Cédric Villebasse, David Bouville, Carlos Alonso-Ramos, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Publikováno v:
Advanced Photonics Research, Vol 4, Iss 2, Pp n/a-n/a (2023)
Mid‐infrared (mid‐IR) optics has a great importance for a large number of applications in sensing, imaging, or even telecommunication. However, high‐speed and room‐temperature‐integrated photodetector (PD) operating in a wide spectrum of th
Externí odkaz:
https://doaj.org/article/d043a7affcba4ce3b235fff46267c000
Autor:
Marco Albani, Roberto Bergamaschini, Andrea Barzaghi, Marco Salvalaglio, Joao Valente, Douglas J. Paul, Axel Voigt, Giovanni Isella, Francesco Montalenti
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Abstract The development of three-dimensional architectures in semiconductor technology is paving the way to new device concepts for various applications, from quantum computing to single photon avalanche detectors. In most cases, such structures are
Externí odkaz:
https://doaj.org/article/35a75d67142b445e9a69f18063381a49
Autor:
Virginia Falcone, Andrea Ballabio, Andrea Barzaghi, Carlo Zucchetti, Luca Anzi, Federico Bottegoni, Jacopo Frigerio, Roman Sordan, Paolo Biagioni, Giovanni Isella
Publikováno v:
APL Photonics, Vol 7, Iss 4, Pp 046106-046106-6 (2022)
We report on the electrical and optical properties of microcrystal arrays obtained by depositing Ge on a deeply patterned Si substrate. Finite difference time domain simulations indicate that the faceted morphology and high refractive index of Ge mic
Externí odkaz:
https://doaj.org/article/e35c49ca9a1049d8aa12d3234b11b365
Autor:
Miguel Montesinos-Ballester, Vladyslav Vakarin, Joan Manel Ramirez, Qiankun Liu, Carlos Alonso-Ramos, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Andrea Barzaghi, Lucas Deniel, David Bouville, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Publikováno v:
Communications Materials, Vol 1, Iss 1, Pp 1-6 (2020)
Mid-infrared optical modulators are important for detecting compounds in a wide range of applications, but are typically limited to short wavelengths. Now, a SiGe waveguide is used to fabricate an optical modulator that can reach wavelengths spanning
Externí odkaz:
https://doaj.org/article/8691f779a5884daeaf5b771b7e2fd0af
Autor:
Worawat Traiwattanapong, Papichaya Chaisakul, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, Laurent Vivien, Delphine Marris-Morini
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035117-035117-9 (2021)
We report on the design and simulation of a waveguide-integrated Ge/SiGe quantum-confined Stark effect (QCSE) optical modulator based on the use of a Ge-rich SiGe relaxed buffer on a graded buffer as an optical waveguide. Despite the promising potent
Externí odkaz:
https://doaj.org/article/a8757aab128b453eaf9f3a8162dc126e
Autor:
Anna Giorgioni, Stefano Paleari, Stefano Cecchi, Elisa Vitiello, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli, Fabio Pezzoli
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-11 (2016)
Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of p
Externí odkaz:
https://doaj.org/article/cc0a2887038944919c6dbbbe042fc45c
Autor:
Dimosthenis Toliopoulos, Alexey Fedorov, Sergio Bietti, Monica Bollani, Emiliano Bonera, Andrea Ballabio, Giovanni Isella, Mohammed Bouabdellaoui, Marco Abbarchi, Shiro Tsukamoto, Stefano Sanguinetti
Publikováno v:
Nanomaterials, Vol 10, Iss 12, p 2542 (2020)
We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO2/Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron micros
Externí odkaz:
https://doaj.org/article/5b0deb3491004752b555d9ee2b0d1391