Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Giovanni Esteves"'
Autor:
A. S. M. Zadid Shifat, Isaac Stricklin, Ravi Kiran Chityala, Arjun Aryal, Giovanni Esteves, Aleem Siddiqui, Tito Busani
Publikováno v:
Nanomaterials, Vol 13, Iss 2, p 274 (2023)
A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made ScxAl1−xN a promising material in numerous MEMS and optoelectronics applications. One of the substantial ch
Externí odkaz:
https://doaj.org/article/8a669dcca65344ea972a051592a1308c
Publikováno v:
Micromachines, Vol 13, Iss 7, p 1066 (2022)
Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al1−xScxN) thin films have achieved widespread
Externí odkaz:
https://doaj.org/article/8a5ff27b7a0a4a09b04dd75623fbec0c
Publikováno v:
BMJ Open, Vol 9, Iss 6 (2019)
IntroductionNudge-interventions aimed at health professionals are proposed to reduce the overuse and underuse of health services. However, little is known about their effectiveness at changing health professionals’ behaviours in relation to overuse
Externí odkaz:
https://doaj.org/article/9a613728f68248609ca8f650af755627
Autor:
Rosa, Regis Goulart, Ferreira, Giovanni Esteves, Viola, Thiago Wendt, Robinson, Caroline Cabral, Kochhann, Renata, Berto, Paula Pinheiro, Biason, Livia, Cardoso, Paulo Ricardo, Falavigna, Maicon, Teixeira, Cassiano
Publikováno v:
In Journal of Critical Care August 2019 52:115-125
Autor:
Xiwen Liu, John Ting, Yunfei He, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Dixiong Wang, Jonathan Frost, Pariasadat Musavigharavi, Giovanni Esteves, Kim Kisslinger, Surendra B. Anantharaman, Eric A. Stach, Roy H. Olsson, Deep Jariwala
Publikováno v:
Nano Letters. 22:7690-7698
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data centric processing. At a hardware level, this presents an urgent need to integrate dense, high-performance and low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f69dd56b012a6e79ff23cf77bf8910b4
https://doi.org/10.1021/acs.nanolett.2c03169
https://doi.org/10.1021/acs.nanolett.2c03169
Autor:
Joseph E. Brown, Susan Trolier-McKinstry, Thomas E. Beechem, Benjamin A. Griffin, Brian M. Foley, Jon Paul Maria, Roy H. Olsson, Jung In Yang, Sukwon Choi, Carlos Perez, Kevin Ferri, David W. Snyder, Christopher B. Saltonstall, James Spencer Lundh, Zichen Tang, Giovanni Esteves, Yiwen Song
Publikováno v:
ACS Applied Materials & Interfaces. 13:19031-19041
Radio frequency (RF) microelectromechanical systems (MEMS) based on Al1-xScxN are replacing AlN-based devices because of their higher achievable bandwidths, suitable for the fifth-generation (5G) mobile network. However, overheating of Al1-xScxN film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71dbc438bb0107a12f975d4d85936df4
https://doi.org/10.1021/acsami.1c02912
https://doi.org/10.1021/acsami.1c02912
Autor:
Susan Trolier-McKinstry, Lyndsey M. Denis-Rotella, Jacob L. Jones, Giovanni Esteves, Julian Walker, Hanhan Zhou
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 68:259-272
Ferroelectric films are often constrained by their substrates and subject to scaling effects, including suppressed dielectric permittivity. In this work, the thickness dependence of intrinsic and extrinsic contributions to the dielectric properties w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2ba2d07496b334dd5bd259a2dc64089
https://doi.org/10.1109/tuffc.2020.2987438
https://doi.org/10.1109/tuffc.2020.2987438
Autor:
Samantha T. Jaszewski, Philip Ryan, Michael David Henry, Jon F. Ihlefeld, Alejandro Salanova, Paul Davids, Ian A. Brummel, Giovanni Esteves, Sean W. Smith, Steve Wolfley, Shelby S. Fields
Publikováno v:
ACS Applied Materials & Interfaces. 12:26577-26585
Ferroelectric hafnium zirconium oxide holds great promise for a broad spectrum of complementary metal-oxide-semiconductor (CMOS) compatible and scaled microelectronic applications, including memory, low-voltage transistors, and infrared sensors, amon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5091561490242e659dce7dfc2b33403
https://doi.org/10.1021/acsami.0c03570
https://doi.org/10.1021/acsami.0c03570
Autor:
Michael Henry, Shelby Fields, Sean Smith, Paul Davids, Giovanni Esteves, Steven Wolfley, Travis Young, Jon Ihlefeld
Publikováno v:
AVS 67 Virtual Symposium, Held Virtually, 25-28 Oct 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18748e02b94274187e91ad6b1f169bae
https://doi.org/10.2172/1892451
https://doi.org/10.2172/1892451
Autor:
Giovanni Esteves, Joseph Bischoff, Travis Young, Ethan Schmidt, MICHAEL HENRY, Mark Rodriguez, Paul Kotula
Publikováno v:
Proposed for presentation at the AVS 67 in.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c27b0e27324be95d1e8bb0b81c174e62
https://doi.org/10.2172/1892159
https://doi.org/10.2172/1892159