Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Giorgio Polli"'
Autor:
Manuela Sotgia, Walter Ciccognani, Alessandro Salvucci, Ernesto Limiti, M. Vittori, Rocco Giofre, M. Cirillo, Ferdinando Costanzo, Giorgio Polli, Sergio Colangeli
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:5696-5707
The design, realization, and tests of an S-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) single-chip front end (SCFE) is presented. The MMIC, realized on the 250-nm gate length GaN process available from the united monolit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::785a27bbea5e5b69a4c8be498c99d9c3
https://doi.org/10.1109/tmtt.2018.2861716
https://doi.org/10.1109/tmtt.2018.2861716
Autor:
Silvio Fenu, Sergio Colangeli, Ferdinando Costanzo, Patrick E. Longhi, Walter Ciccognani, Ernesto Limiti, Giorgio Polli
This paper presents the design and initial tests of a Gallium Nitride on Silicon (GaN/Si) Single-Pole Double-Throw (SPDT) switch for space-borne satellite observation payloads operating at Ka-band and more precisely around 36GHz. The SPDT is synthesi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c57390e076579d56c9ec76a7e2494237
http://hdl.handle.net/2108/245087
http://hdl.handle.net/2108/245087
Autor:
Ernesto Limiti, Giorgio Polli, Rocco Giofre, A. De Padova, A. Del Gaudio, Sergio Colangeli, Walter Ciccognani, Alessandro Salvucci
In this contribution, a Single-Chip Front-End (SCFE) operating in C-band (from 5.25 GHz to 5.57 GHz) is proposed. The chip is designed exploiting a GaN HEMT process available at Leonardo S.p.A. foundry, featured by 250 nm gate length. The SCFE integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0a5cc229114b9c4d3ce816bc5be4cea
http://hdl.handle.net/2108/202771
http://hdl.handle.net/2108/202771
Autor:
Walter Ciccognani, Aurora De Padova, Giorgio Polli, Sergio Colangeli, Alessandro Salvucci, Ferdinando Costanzo, Ernesto Limiti
Publikováno v:
PRIME
In this contribution two different versions of MMIC LNAs integrating the limiting function are presented. The chips are designed with 0.25 μm gate length GaN on SiC technology as provided by Leonardo foundry, and arrange the receiving circuitry of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf30e974b5f22599b5a963c244132eab
http://hdl.handle.net/2108/212407
http://hdl.handle.net/2108/212407
Autor:
Alessandro Salvucci, M. Vittori, Walter Ciccognani, Giorgio Polli, Ernesto Limiti, Ferdinando Costanzo, Sergio Colangeli
Publikováno v:
PRIME
In this paper, two LNAs, designed to operate in Ka and V bands, and realized in a 70 nm GaAs/InGaAs technology, are presented. Both amplifiers have a 2-stage structure featured by source feedback and self-biasing networks to improve noise performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca5d224ebe73958927b7051d2d894823
http://hdl.handle.net/2108/212427
http://hdl.handle.net/2108/212427
Publikováno v:
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC).
In this paper, the design of a power amplifier (PA) Microwave Monolithic Integrated Circuit (MMIC) fabricated using a 100 nm gate length Gallium Nitride HEMT on Silicon substrate (GaN-Si) is reported. The HPA is based on a four stage architecture, de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::885b6825931942891261742a6724e581
https://doi.org/10.1109/inmmic.2018.8429994
https://doi.org/10.1109/inmmic.2018.8429994
Publikováno v:
PRIME
the design of a Q-band high power amplifier (HPA) in Microwave Monolithic Integrated Circuit (MMIC) technology is presented. The HPA is fabricated in a 100nm gate length Gallium Nitride on Silicon (GaN-Si) technology. The HPA, based on a four-stage a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d390a553ea4eb824427d4a01e47faedc
https://doi.org/10.1109/prime.2018.8430333
https://doi.org/10.1109/prime.2018.8430333
Publikováno v:
PRIME
A new circuit topology for a true logarithmic amplifier (TLA) basic cell is presented. The basic cell is synthesized in quasi-distributed form as the cascade of two single-FET stages. Whereas the operating principle of the overall TLA is well-known (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99aa1a371b4b848ee632b226890b692f
http://hdl.handle.net/2108/212429
http://hdl.handle.net/2108/212429
Autor:
M. Vittori, Rocco Giofre, Walter Ciccognani, Ferdinando Costanzo, Manuela Sotgia, Giorgio Polli, M. Cirillo, Sergio Colangeli, Alessandro Salvucci, Ernesto Limiti
A Single-Chip Front-End design exploiting a 250-nm gate length GaN process provided by United Monolithic Semiconductor (UMS) is proposed in this contribution. The design procedure and preliminary measurement results are provided. In Rx mode, a noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb6d0df7a5006d84ef52751f5d2dbbb1
http://hdl.handle.net/2108/212409
http://hdl.handle.net/2108/212409
Autor:
Alessandro Salvucci, Bal Singh Virdee, Jaume Anguera, Mohammad Alibakhshikenari, Francisco Falcone, Ernesto Limiti, Aurora Andujar, Giorgio Polli, Chan H. See, Raed A. Abd-Alhameed
Publikováno v:
2018 22nd International Microwave and Radar Conference (MIKON).
This paper proposes on an effective mutual coupling suppression technique for planar phased array. This is achieved locating a metamaterial superstrate patch between radiation elements of phased array. The superstrate patch is realised by incorporati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be009b9d8fbe6ad3d2400408a624c7dd
https://doi.org/10.23919/mikon.2018.8405323
https://doi.org/10.23919/mikon.2018.8405323