Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Giorgio Cellere"'
Publikováno v:
Energy Procedia. 150:36-43
33rd European Photovoltaic Solar Energy Conference and Exhibition; 38-41
Shingling technology is a promising approach to improve photovoltaic module efficiency and optimize its energy yield, because it allows an increase of module output power w
Shingling technology is a promising approach to improve photovoltaic module efficiency and optimize its energy yield, because it allows an increase of module output power w
Autor:
A. Barbato, Alessandro Voltan, Gaudenzio Meneghesso, Giorgio Cellere, Diego Tonini, Andrea Cester, Giovanna Mura, Matteo Meneghini, Marco Barbato
Publikováno v:
Solar Energy Materials and Solar Cells. 147:288-294
The study of solar cells subjected to reverse biasing is of fundamental importance since the reliability of an entire solar panel can be influenced by the presence of leakage paths on a single solar cell. The particular situation of reverse biasing c
Autor:
R. De Rose, Felice Crupi, Paolo Magnone, Marco Martire, Enrico Sangiorgi, A. B. Malomo, Giorgio Cellere, Diego Tonini
Publikováno v:
Microelectronics Reliability. 52:2500-2503
In this work we propose a methodology based on a mixed-mode simulation approach to evaluate the impact of finger interruptions in the front-side metallization on the solar cell performance. We apply the proposed methodology to typical finger profiles
Autor:
Andrea Baccini, Alessandro Voltan, Alessandro Casarin, Marco Galiazzo, Giorgio Cellere, Diego Tonini
Publikováno v:
Progress in Photovoltaics: Research and Applications. 20:670-680
Significant improvements in c-Si solar cells performance can be achieved acting on the emitter or on the contact formation side. At the moment, an efficiency gain around 0.5–0.6%abs [1] has been demonstrated for selective emitter (SE) cells, mainly
Autor:
Giorgio Cellere, Alessandro Paccagnella, Angelo Visconti, Simone Gerardin, Marta Bagatin, M. Bonanomi
Publikováno v:
Microelectronics Reliability. 50:1837-1841
We studied the impact of previous X-ray irradiation on the sensitivity of floating gate cells to heavy-ion upsets, to emulate the concurrent occurrence of both total ionizing dose and single event effects in the space environment. An increasing heavy
Autor:
S. Beltrami, Marta Bagatin, Giorgio Cellere, Simone Gerardin, Reno Harboe-Sorensen, Alessandro Paccagnella, Ari Virtanen, Angelo Visconti
Publikováno v:
IEEE Transactions on Nuclear Science. 55:3302-3308
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities
Autor:
Ari Virtanen, Angelo Visconti, Giorgio Cellere, Reno Harboe-Sorensen, M. Bonanomi, S. Beltrami, Alessandro Paccagnella
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2042-2047
Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art floating gate memories by using both a medium energy (SIRAD) and
Autor:
Leandro Lorenzelli, Alessandro De Toni, L. Santoni, Mauro Borgo, Alessandro Paccagnella, L. Bandiera, Giorgio Cellere
Publikováno v:
ECS Transactions. 6:1-11
Many fundamental researches in molecular biology deal with molecules which need to be inserted into the plasmatic membrane of living (cultured) cells. Working with single cells represents an important improvement for some of these studies, since it a
Autor:
S. Beltrami, Alessandro Paccagnella, Marty R. Shaneyfelt, Angelo Visconti, J.R. Schwank, Giorgio Cellere, M. Bonanomi, P. Paillet
Publikováno v:
IEEE Transactions on Nuclear Science. 54:1066-1070
We irradiated floating gate (FG) memories with nor and nand architecture by using different TID sources, including 2 MeV, 98 MeV, and 105 MeV protons, X-rays, and Upsi-rays. Two classes of phenomena are responsible for charge loss from programmed FGs
Autor:
Giovanna Mura, A. Barbato, Enrico Zanoni, Andrea Cester, Marco Barbato, Gaudenzio Meneghesso, Giorgio Cellere, Diego Tonini, Matteo Meneghini, Alessandro Voltan
Publikováno v:
IRPS
The study of the degradation of silicon solar cells submitted to reverse bias stress is of crucial importance since the reliability of an entire PV system can be affected by the presence of weak paths (“hot spots”) on a single solar cell. This pa