Výsledky vyhledávání - "Giorgio, Lulli"

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions

Publikováno v: Materials Science Forum. :421-424

In this work under-mask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on the Monte-Carlo binary collision approximation (MC–BCA). Results indicate that a small fraction of ions, implanted normal to a (0001

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a1ea2ef07bea3a2859f1169246ce6b89
https://doi.org/10.4028/www.scientific.net/msf.679-680.421

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Guidelines for teaching and learning science in creative ways

Autor: Mila D'Angelantonio (1), Francesca Magrefi (2), Olivia Levrini (3), Giorgio Lulli (4), Vito Vitale (5), Lucilla Capotondi (6)

Publikováno v: info:cnr-pdr/source/autori:Mila D'Angelantonio (1), Francesca Magrefi (2), Olivia Levrini (3), Giorgio Lulli (4), Vito Vitale (5), Lucilla Capotondi (6)/titolo:Guidelines for Teaching and Learning Science in creative ways/editore:/anno:2013

The Guidelines for teaching and learning science in a creative way are the final outcome of the EU STENCIL Project (http://www.stencil-science.eu/index.php). The Guidelines wants to offer to educational authorities and policy makers from all over Eur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::972d25d899ba32be3b5396b487efd141
http://hdl.handle.net/11585/261087

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Defect-induced homogeneous amorphization of silicon: the role of defect structure and population

Autor: S. Balboni, E. Albertazzi, Luciano Colombo, Giorgio Lulli

Publikováno v: Journal of physics. Condensed matter
18 (2006): 2077–2088. doi:10.1088/0953-8984/18/6/020
info:cnr-pdr/source/autori:Lulli, G; Albertazzi, E; Balboni, S; Colombo, L/titolo:Defect-induced homogeneous amorphization of silicon: the role of defect structure and population/doi:10.1088%2F0953-8984%2F18%2F6%2F020/rivista:Journal of physics. Condensed matter (Print)/anno:2006/pagina_da:2077/pagina_a:2088/intervallo_pagine:2077–2088/volume:18

Molecular dynamics based on the environment-dependent interatomic potential is used to investigate the influence of the nature and distribution of defects on solid state, homogeneous amorphization of Si. To this end, different kinds of defects, inclu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da7926e125bb3b95645d28eb86580aa0
https://doi.org/10.1088/0953-8984/18/6/020

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Channeling characterization of defects in silicon: an atomistic approach

Autor: Luciano Colombo, Marco Bianconi, E. Albertazzi, S. Balboni, Alessandra Satta, Giorgio Lulli

Publikováno v: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
230 (2005): 185–192. doi:10.1016/j.nimb.2004.12.038
info:cnr-pdr/source/autori:Bianconi M., Albertazzi E., Balboni S., Colombo L., Lulli G., Satta A./titolo:Channeling characterization of defects in silicon: an atomistic approach/doi:10.1016%2Fj.nimb.2004.12.038/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2005/pagina_da:185/pagina_a:192/intervallo_pagine:185–192/volume:230

We review here the possibilities opened by a recent development of the Monte Carlo binary collision approximation (MC-BCA) simulation of Rutherford backscattering spectrometry-channeling (RBS-C) spectra for the study of radiation damage in monocrysta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58f410898624efaadf5317d5130b1719
https://doi.org/10.1016/j.nimb.2004.12.038

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Atomistic simulation of ion channeling in heavily doped Si:As

Autor: Marco Bianconi, Luciano Colombo, S. Balboni, E. Albertazzi, Alessandra Satta, Giorgio Lulli

Publikováno v: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
230 (2005): 112–117. doi:10.1016/j.nimb.2004.12.027
info:cnr-pdr/source/autori:Satta A., Albertazzi E., Bianconi M., Lulli G., Balboni S., Colombo L./titolo:Atomistic simulation of ion channeling in heavily doped Si : As/doi:10.1016%2Fj.nimb.2004.12.027/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2005/pagina_da:112/pagina_a:117/intervallo_pagine:112–117/volume:230

The structure of vacancy-As complexes (V-AS(m), with m = 1,4) is calculated by first-principles methods and implemented in Monte Carlo (MC) simulation of Rutherford backscattering-channeling (RBS-C) spectra. Using this procedure the atomic position o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f29a7db326575a20e6b2f400a002210
https://doi.org/10.1016/j.nimb.2004.12.027

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Computer simulation of ion channeling in Si containing structurally relaxed point defects

Autor: Giorgio Lulli, E. Albertazzi, Marco Bianconi, S. Balboni

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 211:50-54

Atomistic simulation of ion channeling in Si shows that the lattice deformation around point defects, calculated by empirical potentials, gives a significant contribution to the backscattering yield of He ions channeled along major axial or planar di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::27c677dd130799467a0ab4cab3c9729c
https://doi.org/10.1016/s0168-583x(03)01184-4

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Charge states distribution of 3350 keV He ions channeled in silicon

Autor: Giorgio Lulli, G. G. Bentini, E. Albertazzi, Marco Bianconi, R Lotti

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 193:113-117

When an ion beam is aligned along a major crystalline axis the dominant interaction is with valence electrons. In this condition the charge exchange processes mostly concern the interaction between the incident ion and a quasi-free electron gas and a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::162cc5a6c631ac04c2f12f10bda4eb9c
https://doi.org/10.1016/s0168-583x(02)00736-x

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