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pro vyhledávání: '"Giorgi Aroshvili"'
Autor:
Eunjung Cho, Dimitris Pavlidis, Sanghyun Seo, Laurence Considine, Chong Jin, Giorgi Aroshvili
Publikováno v:
IEICE Transactions on Electronics. :1245-1250
The paper presents a systematic study of in-situ passivated AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) with submicron gates. DC, high frequency small signal, large signal and low frequency dispersion effects are reported
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8d690616b0730e874582934964d393
https://doi.org/10.1587/transele.e93.c.1245
https://doi.org/10.1587/transele.e93.c.1245
