Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Gino Giusi"'
Publikováno v:
Applied Sciences, Vol 11, Iss 17, p 8234 (2021)
Electrical Impedance Spectroscopy (EIS) is a characterization technique that is gaining more and more importance in various fields of research and applications. The frequency range of investigation varies according to the type of application. In some
Externí odkaz:
https://doaj.org/article/4341454529da4a23b3d5e8b05f03c0a6
Publikováno v:
Sensors, Vol 21, Iss 13, p 4307 (2021)
The main requirement for using the Fluctuation Enhanced Sensing technique is the ability to perform low-frequency noise measurements. The portability of the measurement system is also a quite desirable feature not limited to this specific application
Externí odkaz:
https://doaj.org/article/1f8ebc5be6d14abebce6ef5b2510926a
Autor:
Guilherme, Migliato Marega, Zhenyu, Wang, Maksym, Paliy, Gino, Giusi, Sebastiano, Strangio, Francesco, Castiglione, Christian, Callegari, Mukesh, Tripathi, Aleksandra, Radenovic, Giuseppe, Iannaccone, Andras, Kis
Publikováno v:
ACS nano. 16(3)
Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous el
Autor:
Guilherme Migliato Marega, Zhenyu Wang, Maksym Paliy, Gino Giusi, Sebastiano Strangio, Francesco Castiglione, Christian Callegari, Mukesh Tripathi, Aleksandra Radenovic, Giuseppe Iannaccone, Andras Kis
Publikováno v:
ACS Nano
Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fd0d8d0d6884bcd735e1cba8a721eb9
https://zenodo.org/record/7494325
https://zenodo.org/record/7494325
Publikováno v:
Journal of Sensors, Vol 2020 (2020)
We propose a new approach for the extraction of the equivalent parameters of quartz tuning forks used as sensors by means of noise measurements. Noise is used as the test signal for the determination, by means of spectral analysis, of the frequency r
Publikováno v:
Sensors (Basel, Switzerland)
Sensors
Volume 21
Issue 13
Sensors, Vol 21, Iss 4307, p 4307 (2021)
Sensors
Volume 21
Issue 13
Sensors, Vol 21, Iss 4307, p 4307 (2021)
The main requirement for using the Fluctuation Enhanced Sensing technique is the ability to perform low-frequency noise measurements. The portability of the measurement system is also a quite desirable feature not limited to this specific application
Autor:
Matteo Rapisarda, Luigi Mariucci, Guglielmo Fortunato, Antonio Valletta, Sabrina Calvi, Gino Giusi, A. La Magna
In this work we study the electrical stability under both gate bias stress and gate and drain bias stress of short channel (L = 5 μm) bottom contact/top gate OTFTs made on flexible substrate with solution-processed organic semiconductor and fluoropo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8f27d9c0a01650e8c6f12a2d5ec4e56
https://hdl.handle.net/2108/311976
https://hdl.handle.net/2108/311976
Autor:
Gino Giusi
Junctionless Transistors (JL) and One-Transistor (1T) DRAMs are concepts that come out in order to improve the scalability of logic and volatile memories, respectively. In some recent papers, Floating Body (FB) DRAMs (a class of 1T-DRAM) and JL trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96ba102d1ce152be57a48e8360e98200
http://hdl.handle.net/11570/3166575
http://hdl.handle.net/11570/3166575
Publikováno v:
I2MTC
DC coupled transimpedance amplifiers based on operational amplifiers are common in the field of noise measurements on electron devices. The current required to bias the device under test typically flows through a resistor whose noise adds to the back
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e8c4c4dd1fa2236c31cc70f5d9124d4
http://hdl.handle.net/11570/3145254
http://hdl.handle.net/11570/3145254
Autor:
Gino Giusi
Publikováno v:
Electronics, Vol 10, Iss 706, p 706 (2021)
Electronics
Volume 10
Issue 6
Electronics
Volume 10
Issue 6
One-Transistor (1T) DRAMs are one of the potential replacements for conventional 1T-1C dynamic memory cells for future scaling of embedded and stand-alone memory architectures. In this work, a scaled (channel length 10nm) floating body 1T memory devi