Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ginger G. Walden"'
Autor:
Robert S. Howell, Ty McNutt, Stephen Van Campen, Ranbir Singh, Ginger G. Walden, Marc E. Sherwin
Publikováno v:
Materials Science Forum. :1139-1142
For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performance and power dissipation of silicon carbide (SiC) n-channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee6f0938db04c12eb6d8494e579897af
https://doi.org/10.4028/www.scientific.net/msf.600-603.1139
https://doi.org/10.4028/www.scientific.net/msf.600-603.1139
Publikováno v:
Materials Science Forum. :1191-1194
We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6997d9499d32cc03e67c72bfcb2d4360
https://doi.org/10.4028/www.scientific.net/msf.600-603.1191
https://doi.org/10.4028/www.scientific.net/msf.600-603.1191
Publikováno v:
Materials Science Forum. :1143-1146
We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional parameter space defined by blocking voltage, switching frequency, and current density. We determine the maximum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7e2d62ca95309dd8b4109d5aa726e15
https://doi.org/10.4028/www.scientific.net/msf.600-603.1143
https://doi.org/10.4028/www.scientific.net/msf.600-603.1143
Publikováno v:
IEEE Transactions on Electron Devices. 55:1920-1927
The 4H-SiC p-channel IGBTs designed to block 15 and 20 kV are optimized for minimum loss (on-state plus switching power) by adjusting the parameters of the JFET region, drift layer, and buffer layer, using 2-D MEDICI simulations. Switching loss exhib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f62b2008422e4f218d8b9597517f2d3
https://doi.org/10.1109/ted.2008.926965
https://doi.org/10.1109/ted.2008.926965
Publikováno v:
IEEE Transactions on Electron Devices. 55:1928-1933
The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunch-through buffer layer is found to be the major factor determining switchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb15e426d78b48519a326fd736f40192
https://doi.org/10.1109/ted.2008.926594
https://doi.org/10.1109/ted.2008.926594
Publikováno v:
Materials Science Forum. :1449-1452
We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25716fe819bea2086e1996f7a8363db3
https://doi.org/10.4028/www.scientific.net/msf.527-529.1449
https://doi.org/10.4028/www.scientific.net/msf.527-529.1449
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
In this paper we present recent experimental results on SiC MOSFETs, IGBTs, and thyristors, and propose a consistent methodology for comparing unipolar and bipolar power devices as a function of blocking voltage and switching frequency.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6591b80c0a0282fddf0bc02b0175a5f
https://doi.org/10.1109/iedm.2009.5424401
https://doi.org/10.1109/iedm.2009.5424401
