Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Gina Peschel"'
Autor:
Natalia Michalak, Zygmunt Miłosz, Gina Peschel, Mauricio Prieto, Feng Xiong, Paweł Wojciechowski, Thomas Schmidt, Mikołaj Lewandowski
Publikováno v:
Nanomaterials, Vol 8, Iss 9, p 719 (2018)
Iron oxide films epitaxially grown on close-packed metal single crystal substrates exhibit nearly-perfect structural order, high catalytic activity (FeO) and room-temperature magnetism (Fe3O4). However, the morphology of the films, especially in the
Externí odkaz:
https://doaj.org/article/cc430dfde205401e924ab52514c0dd52
Autor:
Alexander Fuhrich, Dietrich Menzel, Mauricio J. Prieto, Feng Xiong, Gina Peschel, Ewa Madej, Hagen W. Klemm, Thomas Schmidt, Hans-Joachim Freund
Publikováno v:
The Journal of Physical Chemistry C. 123:8228-8243
Silica mono- and bilayer films on Ru(0001) can be physisorbed or chemisorbed, with ordered or vitreous structures, depending on the particular preparation procedures applied. Using the SMART spectro-microscope at BESSY-II with its capabilities for μ
Autor:
Hagen W. Klemm, Hans-Joachim Freund, Thomas Schmidt, Alexander Fuhrich, Martin Timm, Dietrich Menzel, Gina Peschel, Ewa Madej
Publikováno v:
Surface Science
We use an aberration corrected spectro-microscope, the low energy electron microscope/photoelectron emission microscope (LEEM/PEEM) SMART, to follow the preparation and structure of a bilayer silica film on Ru(0001) as a function of temperature and o
Autor:
Mauricio J. Prieto, Gina Peschel, Paweł T. Wojciechowski, Zygmunt Miłosz, Mikołaj Lewandowski, N. Michalak, Feng Xiong, Thomas Schmidt
Publikováno v:
Nanomaterials, Vol 8, Iss 9, p 719 (2018)
Nanomaterials
Volume 8
Issue 9
Nanomaterials
Volume 8
Issue 9
Iron oxide films epitaxially grown on close-packed metal single crystal substrates exhibit nearly-perfect structural order, high catalytic activity (FeO) and room-temperature magnetism (Fe3O4). However, the morphology of the films, especially in the
Autor:
Hagen W. Klemm, Gina Peschel, Dan Wargulski, Ewa Madej, Simone Raoux, Xiaxia Liao, Alexander Fuhrich, Claudia Hartmann, Regan G. Wilks, Golnaz Sadoughi, Henry J. Snaith, Marcus Bär, Thomas Schmidt, Daniel Abou-Ras, Evelyn Handick, Roberto Félix
Publikováno v:
Advanced Materials Interfaces
The unprecedented speed at which the performance of solar cells based on solution-processed perovskite thin films has increased, in some ways, appears to violate conventional understanding of device optimization. The relatively poor coverage of the T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae14a7e3806115ccd3c3556d49438e4c
https://hdl.handle.net/21.11116/0000-0000-374D-D21.11116/0000-0001-856A-221.11116/0000-0001-856B-1
https://hdl.handle.net/21.11116/0000-0000-374D-D21.11116/0000-0001-856A-221.11116/0000-0001-856B-1
Autor:
Gina Peschel, Andrea Karthäuser, Thomas Schmidt, Francesca Genuzio, Tobias Breuer, Alexander Fuhrich, Gregor Witte, Hagen W. Klemm
Publikováno v:
ACS applied materialsinterfaces. 9(9)
The novel organic semiconductor dinaphthothienothiophene (DNTT) has gained considerable interest because its large charge carrier mobility and distinct chemical robustness enable the fabrication of organic field effect transistors with remarkable lon
Autor:
Michelle Y. Simmons, Thomas Schmidt, Gina Peschel, Hagen W. Klemm, Yuran Niu, Justin W. Wells, Alexei Zakharov, S. P. Cooil, D. Andrew Evans, Jill A. Miwa, Federico Mazzola
Publikováno v:
Cooil, S P, Mazzola, F, Klemm, H W, Peschel, G, Niu, Y R, Zakharov, A A, Simmons, M Y, Schmidt, T, Evans, D A, Miwa, J A & Wells, J W 2017, ' In Situ Patterning of Ultrasharp Dopant Profiles in Silicon ', A C S Nano, vol. 11, no. 2, pp. 1683-1688 . https://doi.org/10.1021/acsnano.6b07359
We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow pro
Autor:
Hagen W. Klemm, Torta Boeck, Thomas Teubner, Martina Schmid, F. Ringleb, Alexander Fuhrich, Thomas Schmidt, K. Eylers, Berit Heidmann, Thomas Unold, Gina Peschel, Sergiu Levcenco
We present a bottom-up approach for the fabrication of CuIn x Ga (l-x) Se 2 (CIGSe) micro-concentrator solar cells by local growth of In-Ga micro-islands. In addition to the intended islands, the indium deposition leads to a parasitic indium wetting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7497aa25db002435b70ee7ba1d965ff
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85063467004
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85063467004
Autor:
Jill A. Miwa, Hagen W. Klemm, Thomas Schmidt, Mauricio J. Prieto, Justin W. Wells, Federico Mazzola, Eva Anne Mørtsell, M. R. Jorge, Lars Thomsen, Randi Holmestad, Alexander Fuhrich, Sigurd Wenner, S. P. Cooil, Gina Peschel, Mark T. Edmonds
Publikováno v:
Cooil, S P, Mortsell, E A, Mazzola, F, Jorge, M, Wenner, S, Edmonds, M T, Thomsen, L, Klemm, H W, Peschel, G, Fuhrich, A, Prieto, M, Schmidt, T, Miwa, J A, Holmestad, R & Wells, J W 2016, ' Thermal migration of alloying agents in aluminium ', Materials Research Express, vol. 3, no. 11, 116501 . https://doi.org/10.1088/2053-1591/3/11/116501
Materials Research Express
Materials Research Express
The in situ thermal migration of alloying agents in an Al–Mg–Si–Li alloy is studied using surface sensitive photo-electron and electron diffraction/imaging techniques. Starting with the preparation of an almost oxide free surface (oxide thickne
Autor:
Mauricio J. Prieto, Hagen W. Klemm, Hyun Jin Yang, Gina Peschel, Dietrich Menzel, Anna Kelemen, Thomas Schmidt, Adrián Leandro Lewandowski, Hans-Joachim Freund, Martin Schütz, Alexander Fuhrich, Denis Usvyat, Markus Heyde, Radosław Włodarczyk, Shamil K. Shaikhutdinov, Joachim Sauer, David Kuhness, Xin Yu
Publikováno v:
Journal of the American Chemical Society
We present a new polymorph of the two-dimensional (2D) silica film with a characteristic ‘zigzag’ line structure and a rectangular unit cell which forms on a Ru(0001) metal substrate. This new silica polymorph may allow for important insights int