Zobrazeno 1 - 10
of 164
pro vyhledávání: '"Gilson Wirth"'
Autor:
Sebastian Pazos, Wenwen Zheng, Tommaso Zanotti, Fernando Aguirre, Thales Becker, Yaqing Shen, Kaichen Zhu, Yue Yuan, Gilson Wirth, Francesco Maria Puglisi, Juan Bautista Roldán, Felix Palumbo, Mario Lanza
Publikováno v:
Nanoscale. 15:2171-2180
The development of the internet-of-things requires cheap, light, small and reliable true random number generator (TRNG) circuits to encrypt the data—generated by objects or humans—before transmitting them. However, all current solutions consume t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1029b10dc6bb1e705a1689996f95cc9d
https://doi.org/10.1039/d2nr06222d
https://doi.org/10.1039/d2nr06222d
Publikováno v:
Fluctuation and Noise Letters.
Generating streams of true random numbers is a critical component of many electronic and information systems. The design of fully integrated, area and power efficient true random number generators (TRNGs) is a challenge. We propose a fully integrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6cf27b7ab21cdab7184f4254332310
https://doi.org/10.1142/s021947752350027x
https://doi.org/10.1142/s021947752350027x
Autor:
Eduardo Pellin Moser, Mario Lanza, Gilson Wirth, Xuehua Li, Thales Exenberger Becker, Pedro Alves
Publikováno v:
IEEE Electron Device Letters. 43:146-149
Resistive switching (RS) has been studied for several applications such as information storage and bio-inspired computing, although reliability issues still prevent their massive use. In this work, we present a novel observation of trapping activity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1529ff6b91755ceb8c3977bea1470b73
https://doi.org/10.1109/led.2021.3131863
https://doi.org/10.1109/led.2021.3131863
Publikováno v:
Journal of Integrated Circuits and Systems. 16:1-11
This work presents a comprehensive description of an in-house 3D Monte Carlo device simulator for physical mod-eling of FinFETs. The simulator was developed to consider var-iability effects properly and to be able to study deeply scaled devices opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5d8406e8faf70052a154e5e38f6b999
https://doi.org/10.29292/jics.v16i2.476
https://doi.org/10.29292/jics.v16i2.476
Autor:
Dragica Vasileska, Alan Carlos Junior Rossetto, Gilson Wirth, Vinícius Valduga de Almeida Camargo
Publikováno v:
Journal of Computational Electronics. 20:1644-1656
A self-consistent electrothermal particle-based device simulator for the study of self-heating effects in p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) based in silicon is developed and presented. The tool utilizes the Ensemble
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d94b31d9837fdbd964b8fe423fc3178c
https://doi.org/10.1007/s10825-021-01740-5
https://doi.org/10.1007/s10825-021-01740-5
Publikováno v:
Journal of Integrated Circuits and Systems. 16:1-5
This paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the heavy-hole and light-hole ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1acc37211b55071258a11fc1e9716c1
https://doi.org/10.29292/jics.v16i1.156
https://doi.org/10.29292/jics.v16i1.156
Autor:
Gilson Wirth
Publikováno v:
IEEE Transactions on Electron Devices. 68:17-23
With the downscaling of device dimensions, the variability of metal–oxide–semiconductor field-effect transistor (MOSFET) electrical behavior is produced by factors other than variations in physical dimensions and doping profiles, which are there
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54809c3c2b923bfee9f96e57db28f7f3
https://doi.org/10.1109/ted.2020.3039204
https://doi.org/10.1109/ted.2020.3039204
Autor:
Xuehua Li, Yiping Xiao, Gilson Wirth, Mario Lanza, Kaichen Zhu, Pedro Alves, Tao Wang, Thales Exenberger Becker
Publikováno v:
IEEE Electron Device Letters. 41:1596-1599
Resistive switching (RS) devices are being studied exhaustively for multiple applications such as information storage and bio-inspired computing, but some reliability problems are still hindering their massive use. Among them, random telegraph noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fd4248943c5c194d9bc37ea80e658fa
https://doi.org/10.1109/led.2020.3015842
https://doi.org/10.1109/led.2020.3015842
Publikováno v:
Journal of Integrated Circuits and Systems. 15:1-4
In this work, we present a novel understanding about the anomalous Random Telegraph Noise (aRTN), asserting the existence of coupling effect among multiple traps regarding current amplitude deviation. Based on the examination in the literature of ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f4e1f813eb4ce84647fe0f9f77aab2
https://doi.org/10.29292/jics.v15i2.148
https://doi.org/10.29292/jics.v15i2.148
Publikováno v:
Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
This work presents an experimental andThis work presents an experimental and simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and widt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0396680f3d1eb54a18fe42d5cd7f5951
https://doi.org/10.29292/jics.v15i2.126
https://doi.org/10.29292/jics.v15i2.126