Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Gilsang Yoon"'
Publikováno v:
Micromachines, Vol 14, Iss 12, p 2199 (2023)
Electrical characteristics with various program temperatures (TPGM) in three-dimensional (3-D) NAND flash memory are investigated. The cross-temperature conditions of the TPGM up to 120 °C and the read temperature (TREAD) at 30 °C are used to analy
Externí odkaz:
https://doaj.org/article/916f84299e074bf8b253c9c6b0aea724
Publikováno v:
Micromachines, Vol 14, Iss 11, p 2007 (2023)
The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the VTH of noncircular cells
Externí odkaz:
https://doaj.org/article/9c2ac228c01745649b71756b79e55f6d
Publikováno v:
IEEE Access, Vol 10, Pp 62423-62428 (2022)
The quantitative characteristics of traps created in the bandgap-engineered tunneling oxide (BE-TOX) layer and block layer after program/erase (P/E) stress-cycling in a 3D NAND flash memory were investigated. The trap spectroscopy by charge injection
Externí odkaz:
https://doaj.org/article/88b50f89cd4341b4b8005f5c022f3bcb
Publikováno v:
IEEE Access, Vol 9, Pp 118794-118800 (2021)
The extraction of nitride trap density ( $N_{t}$ ) filled with electrons emitted by thermal emission (TE) in the charge-trapping layer of 3-D NAND flash memory is demonstrated. The intercell program (IP) pattern was adopted to intentionally inject el
Externí odkaz:
https://doaj.org/article/30339e498b054011b50b62a88f13d0e5
Publikováno v:
Micromachines, Vol 12, Iss 7, p 741 (2021)
We present the fabrication and electrical characteristics of nanonet-channel (NET) low-temperature polysilicon channel (LTPS) thin-film transistors (TFTs) using a nanosphere-assisted patterning (NAP) technique. The NAP technique is introduced to form
Externí odkaz:
https://doaj.org/article/2c604e0dc7694cf2a2513f286daf952b
Autor:
Jeong-Soo Lee, Gilsang Yoon, JOUNGHUN PARK, Jungsik Kim, Donghwi Kim, Donghyun Go, Jin-Woo Han
Publikováno v:
IEEE Transactions on Electron Devices. 69:6089-6094
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc12b158aa819645a584e7b1b236e484
https://doi.org/10.1109/ted.2022.3207113
https://doi.org/10.1109/ted.2022.3207113
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d5e02feb5be03bf7d8427056d21527d
https://doi.org/10.1109/edtm55494.2023.10102959
https://doi.org/10.1109/edtm55494.2023.10102959
Autor:
Jounghun Park, Gilsang Yoon, Donghyun Go, Donghwi Kim, Ukju An, Jongwoo Kim, Jungsik Kim, Jeong-Soo Lee
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1234e6ad62407d042b6f45df355537ff
https://doi.org/10.1109/irps48203.2023.10117868
https://doi.org/10.1109/irps48203.2023.10117868
Publikováno v:
IEEE Access. 10:62423-62428
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4f6f0a402938c442571eae2ad1a34a1
https://doi.org/10.1109/access.2022.3182397
https://doi.org/10.1109/access.2022.3182397
Publikováno v:
Micromachines, Vol 12, Iss 741, p 741 (2021)
Micromachines
Volume 12
Issue 7
Micromachines
Volume 12
Issue 7
We present the fabrication and electrical characteristics of nanonet-channel (NET) low-temperature polysilicon channel (LTPS) thin-film transistors (TFTs) using a nanosphere-assisted patterning (NAP) technique. The NAP technique is introduced to form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4cca5e4fc6739b2bb31408ad8fab23d
https://www.mdpi.com/2072-666X/12/7/741
https://www.mdpi.com/2072-666X/12/7/741