Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Gilroy Vandentop"'
Autor:
Manish Chandhok, Gilroy Vandentop, Micahel J. Leeson, E. Steve Putna, Grant M. Kloster, Uday Shah, Todd R. Younkin
Publikováno v:
Journal of Photopolymer Science and Technology. 24:127-136
Extreme Ultraviolet (EUV) lithography is a leading technology option for manufacturing at the 22nm half pitch node and beyond. Implementation of the technology will require continued progress on several key supporting infrastructure challenges, inclu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3411a40c38c1464757f5d5cb77f9f009
https://doi.org/10.2494/photopolymer.24.127
https://doi.org/10.2494/photopolymer.24.127
Publikováno v:
13th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems.
With the continuous scaling of low k dielectric in multicore processors, the intrinsic CTE mismatch between a Si die (CTE: 2.3 ppm/°C) and an organic substrate (16–18 ppm/°C) brings a susceptibility for more failures. There are limited successes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cddc3470d98cf44686354b703ffd40c4
https://doi.org/10.1109/itherm.2012.6231426
https://doi.org/10.1109/itherm.2012.6231426
Autor:
Kazuo Tawarayama, Hajime Aoyama, Tetsunori Murachi, Gilroy Vandentop, Takashi Kamo, Yukiyasu Arisawa, Yashesh Shroff, Toshihiko Tanaka, Ichiro Mori, Alan Myers, Yuusuke Tanaka, Taiga Uno
Publikováno v:
SPIE Proceedings.
This paper describes the critical dimension (CD) accuracy of metal-layer patterns for the 15-nm logic node and beyond replicated with model-based optical proximity correction, flare variation compensation, and shadowing effect correction. The model f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb08573926625b28b35dbe20aa0df6b
https://doi.org/10.1117/12.878672
https://doi.org/10.1117/12.878672
Autor:
Gilroy Vandentop, Ernisse Putna, Tetsunori Murachi, Alan Myers, Manish Chandhok, Steven L. Carson, James S. Clarke, Todd R. Younkin, Ted Liang, Michael J. Leeson, Guojing Zhang
Publikováno v:
Alternative Lithographic Technologies.
EUV lithography is considered one of the options for high volume manufacturing (HVM) of 16 nm MPU node devices [1]. The benefits of high k1(~0.5) imaging enable EUVL to simplify the patterning process and ease design rule restrictions. However, EUVL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95232f659c5439fe19273c99acad3be9
https://doi.org/10.1117/12.814436
https://doi.org/10.1117/12.814436
Autor:
Pei-yang Yan, Barry Lieberman, Ted Liang, Emily Y. Shu, Seh-Jin Park, Guojing Zhang, Ping Qu, Alan R. Stivers, Gilroy Vandentop, Sven Henrichs, Erdem Ultanir, Peter Sanchez
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) tool development achieved a big milestone last year as two full-field Alpha Demo Tools (ADT) were shipped to customers by ASML. In the future horizon, a full field "EUV1" exposure tool from Nikon will be availab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24a465211f12bfefb302d0bae38c4db
https://doi.org/10.1117/12.728941
https://doi.org/10.1117/12.728941
Autor:
Seh-Jin Park, Guojing Zhang, Alan Myers, Gilroy Vandentop, Alan R. Stivers, Ted Liang, Patrick P. Naulleau
Publikováno v:
SPIE Proceedings.
Mask defect specifications not only are needed to ensure quality masks for acceptable resist patterning on wafers, but also are utilized as a common goal for tool development, noticeably for mask inspection and repair. Defect specifications are gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4b7919a42a8035fc2c34b90106e6ed
https://doi.org/10.1117/12.681844
https://doi.org/10.1117/12.681844
Autor:
Chang Ju Choi, Emily Y. Shu, Seh-Jin Park, Eric J. Lanzendorf, Guojing Zhang, Alan R. Stivers, Gilroy Vandentop, Kangmin Hsia, Peter Sanchez, Jeff Farnsworth, Manish Chandhok, Pei-yang Yan, Michael J. Leeson, Yan Du, Ted Liang
Publikováno v:
SPIE Proceedings.
It becomes increasingly important to have an integrated process for Extreme UltraViolet (EUV) mask fabrication in order to meet all the requirements for the 32 nm technology node and beyond. Intel Corporation established the EUV mask pilot line by in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6ce9eec27d37275143d35d5e2bc55ef
https://doi.org/10.1117/12.681839
https://doi.org/10.1117/12.681839
Autor:
Brandon Barnett, Gilroy Vandentop, Henning Braunisch, Ian A. Young, Daoqiang Lu, Steven Towle, Edris M. Mohammed, Thomas P. Thomas
Publikováno v:
SPIE Proceedings.
We describe the development of a high-speed, 12-channel (8-data, 2-clock and 2-alignment channels), parallel optical link with a unique packaging concept. The package is used to demonstrate the viability of chip-to-chip optical I/O in very large scal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dadc725039a6c5e6c1d301307105f9e
https://doi.org/10.1117/12.530160
https://doi.org/10.1117/12.530160
Publikováno v:
52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345).
The bumpless build-up layer (BBUL) microelectronic packaging technology is characterized by the absence of a conventional substrate core and a direct extension of the outmost metallization layers of the die into the overall thin substrate. Such a cor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e049475e64a9e2e763d9110f217c297
https://doi.org/10.1109/ectc.2002.1008120
https://doi.org/10.1109/ectc.2002.1008120
Publikováno v:
Packaging, Reliability and Manufacturing Issues Associated With Electronic and Photonic Products.
Bumpless Build-Up Layer (BBUL) is a novel package developed to meet future packaging technology requirements. The BBUL package provides the advantages of small electrical loop inductance and reduced thermomechanical stresses on low dielectric constan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4668b55e674fcfceaf08905e389791aa
https://doi.org/10.1115/imece2001/epp-24703
https://doi.org/10.1115/imece2001/epp-24703