Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Gilles L. Fanget"'
Autor:
Michel Tissier, Alexandra Barberet, Jean-Charles Richoilley, Peter D. Buck, Gilles L. Fanget, Olivier Toublan
Publikováno v:
SPIE Proceedings.
We develop a Mask Process Correction (MPC) set of tools in collaboration with DuPont Photomasks, Mentor Graphics and CEA-LETI. The MPC project consists of 3 modules.
Autor:
Alexandra Barberet, Michel Tissier, Olivier Toublan, Jean-Charles Richoilley, Peter D. Buck, Gilles L. Fanget
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
In this paper we focus on a laser/dry etch mask process simulation. Using Mentor Graphics Calibre RET tool suite, we exploit the similarity between the image on laser based mask writers and the image on wafer steppers. Doing so, we adapt a 'Silicon p
Publikováno v:
SPIE Proceedings.
The first cost effective solution, to achieve a 100 nm gate with a 300 nm pitch, for ASICS manufacturing, is to validate a 193 nm technology using binary masks and weak OPC. This allows us to have zero defects mask with a relative short cycle time. I
Autor:
Tadashi Kusumoto, Bernard Dalzotto, Gilles L. Fanget, Masumi Suetsugu, S. Tedesco, Laurent Pain, M. Ribeiro, B. Scarfogliere, Cécile Gourgon, K. Patterson, Ryotaro Hanawa
Publikováno v:
SPIE Proceedings.
Chemical Amplification Resists (CAR) are now widely used in optical lithography since the introduction of the deep UV era. One advantage of the CARs is also their full compatibility with electron beam writing. This paper is focused on the development
Autor:
Gilles L. Fanget, Michel Tissier, Yves Quere, Gerald Galan, Jean-Charles Richoilley, Alexandra Barberet
Publikováno v:
SPIE Proceedings.
To print subwavelength dimension features in optical lithography, one must correct significant Optical Proximity Effects as well as some other process outcomes. Nowadays, different firms propose to Silicon Industry Optical Proximity Correction (OPC)
Publikováno v:
SPIE Proceedings.
In this study, we focus on mask manufacturing contribution on 248 nm and 193 nm lithography performances. The masks are manufactured at DPI using both E-beam/laser writing technologies (e-beam/laser) and two etching processes (wet/dry). Masks are opt
Autor:
O. Guirimand, M. E. Nier, Michel Heitzmann, Yorick Trouiller, E. Lajoinie, Alexandra Barberet, Laurent Pain, Yves Quere, N. Martin, P. Scheiblin, Gilles L. Fanget, Alain Toffoli, Didier Louis
Publikováno v:
SPIE Proceedings.
193 nm lithography is expected today to be an emerging solution for the development and the production of future integrated circuits based on sub 150 nm design rules. However the characterization and the evaluation of these tools require a lot of eff
Autor:
Corinne Comboroure, Yorick Trouiller, Anne Didiergeorges, Yves Quere, Gilles L. Fanget, Cyrille Laviron
Publikováno v:
SPIE Proceedings.
The goal of this paper is to understand the optical phenomena at dielectric levels (contact, local interconnect, via and damascene line levels). The purpose is also to quantify the impact of dielectric and resist thickness variations on the CD range
Autor:
Anne Didiergeorges, Corinne Comboure, Gilles L. Fanget, Yorick Trouiller, Yves Quere, Cyrille Laviron
Publikováno v:
SPIE Proceedings.
The goal of this paper is to understand the optical phenomena at dielectric levels. The purpose is also to quantify the impact of dielectric and resist thickness variations on the CD range with and without Bottom Anti Reflective COating (BARC). First
Autor:
Aude Maulny, Gilles L. Fanget
Publikováno v:
SPIE Proceedings.
The evaluation of Scanning Electron Microscopes (SEM) resolution through Two Dimensions Fast Fourier Transform (2D FFT) image analysis is becoming a standard. We propose an improvement of these methods with a patented technique. This new image proces