Zobrazeno 1 - 10
of 219
pro vyhledávání: '"Gilles Horowitz"'
Autor:
Sungyeop Jung, Yvan Bonnassieux, Gilles Horowitz, Sungjune Jung, Benjamin Iniguez, Chang-Hyun Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1404-1415 (2020)
In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades
Externí odkaz:
https://doaj.org/article/11d5efd3732a4906b252801f8aab5e8e
Autor:
Chang-Hyun Kim, Gilles Horowitz
Publikováno v:
Materials, Vol 12, Iss 7, p 1169 (2019)
Contact resistance is a major characteristic of organic transistors, and its importance has received renewed attention due to the recent revelation of mobility overestimation. In this article, we propose a method to describe the contact resistance as
Externí odkaz:
https://doaj.org/article/dd18fb754a6742868f51852ea3f263c0
Publikováno v:
Biosensors, Vol 8, Iss 4, p 103 (2018)
We develop a numerical model for the current-voltage characteristics of organic electrochemical transistors (OECTs) based on steady-state Poisson’s, Nernst’s and Nernst⁻Planck’s equations. The model starts with the doping⁻dedoping process d
Externí odkaz:
https://doaj.org/article/5a417b363a3e4318bf63273dc28ffb41
Publikováno v:
IEEE Transactions on Electron Devices. 68:307-310
We study the effect of Gaussian energetic disorder on the organic field-effect transistors (OFETs) with surprisingly high field-effect mobility and the low contact resistance. The numerical device simulation assumes the thermally assisted hopping tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc8ea59e26b183666dc25b25e2e27e1d
https://doi.org/10.1109/ted.2020.3035494
https://doi.org/10.1109/ted.2020.3035494
Autor:
Yvan Bonnassieux, Sungjune Jung, Chang-Hyun Kim, Sungyeop Jung, Benjamin Iniguez, Gilles Horowitz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1404-1415 (2020)
In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46b1f692c67df81ec5a1bd8445c2fbc6
https://ieeexplore.ieee.org/document/9180337/
https://ieeexplore.ieee.org/document/9180337/
Publikováno v:
IEEE Transactions on Electron Devices. 66:4894-4900
We present a drain current model and a consistent parameter extraction method for organic field-effect transistors (OFETs) considering the gate voltage-dependent contact resistance and mobility by power-law. The physical origin of the asymptotic powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b4103a4474f3736bd21752ef530c613
https://doi.org/10.1109/ted.2019.2941564
https://doi.org/10.1109/ted.2019.2941564
Autor:
Sungyeop Jung, Louis Giraudet, S. D. Baranovskii, Andrew Plews, Yvan Bonnassieux, Ahmed Nejim, Gilles Horowitz, Sungjune Jung, Florian Gebhard, Yongjeong Lee, O. Simonetti, Klaus Meerholz
Publikováno v:
Physical Review Applied. 15
Correct parameterization of the Gaussian disorder model (GDM) on spatially random sites is necessary for a complete description of charge transport in disordered materials and concomitant device characteristics. Because the GDM on spatially random si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5779b9ada2d6692f1774ec2a7e9f16
https://doi.org/10.1103/physrevapplied.15.024021
https://doi.org/10.1103/physrevapplied.15.024021
Autor:
Argiris Laskarakis, Jong Woo Jin, Chang-Hyun Kim, Maria Seitanidou, Elefterios Lidorikis, Ioannis Vangelidis, Stergios Logothetidis, Gilles Horowitz, Yvan Bonnassieux
Publikováno v:
Solid-State Electronics. 147:39-43
Although metallic nanostructures in solar cells provide versatility in designing useful plasmonic architectures, understanding is still limited on how to exploit their multi-scale contribution as tunable performance. In this article, we suggest a cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4b1b945d7bc7777de3573aac2f2d93
https://doi.org/10.1016/j.sse.2018.06.005
https://doi.org/10.1016/j.sse.2018.06.005
Autor:
Gilles Horowitz, Chang-Hyun Kim
Publikováno v:
Materials
Volume 12
Issue 7
Materials, Vol 12, Iss 7, p 1169 (2019)
Volume 12
Issue 7
Materials, Vol 12, Iss 7, p 1169 (2019)
Contact resistance is a major characteristic of organic transistors, and its importance has received renewed attention due to the recent revelation of mobility overestimation. In this article, we propose a method to describe the contact resistance as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3145e3df57b00f83281c4dc62cefad1f
Publikováno v:
ECS Meeting Abstracts. :1061-1061
In this communication, a new theoretical model for the ac transit frequency of organic rectifier diodes is proposed. The model is built upon a full description of the drift-diffusion current in the rectifier diode for the entire forward bias regime.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d863e73c3d16a1e67f0815eab5b1afc1
https://doi.org/10.1149/ma2021-01321061mtgabs
https://doi.org/10.1149/ma2021-01321061mtgabs