Zobrazeno 1 - 10
of 844
pro vyhledávání: '"Gilles, Patriarche"'
Autor:
Hao Wei, Simon Dubois, Frederic Brunnett, Julian Peiro, Florian Godel, Cécile Carrétéro, Federico Panciera, Sophie Collin, Fayçal Bouamrane, Victor Zatko, Marta Galbiati, Etienne Carré, Gilles Patriarche, Frédéric Petroff, Jean‐Christophe Charlier, Marie‐Blandine Martin, Bruno Dlubak, Pierre Seneor
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 33, Pp n/a-n/a (2024)
Abstract Van der Waals heterostructures are set as strong contenders for post‐CMOS quantum materials engineering. A major step for their systematic exploration and exploitation of technological component demonstrators resides in their eased large
Externí odkaz:
https://doaj.org/article/45e6dceddd5f4f5f87c483a9a5fa1492
Autor:
Shan Dai, Charlotte Simms, Gilles Patriarche, Marco Daturi, Antoine Tissot, Tatjana N. Parac-Vogt, Christian Serre
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract The size and defects in crystalline inorganic materials are of importance in many applications, particularly catalysis, as it often results in enhanced/emerging properties. So far, applying the strategy of modulation chemistry has been unabl
Externí odkaz:
https://doaj.org/article/251a94b7312c4f7e9096ed1806bb480b
Autor:
Pierucci, Debora, Mahmoudi, Aymen, Silly, Mathieu, Bisti, Federico, Oehler, Fabrice, Bonell, Gilles Patriarche Frédéric, Marty, Alain, Vergnaud, Céline, Jamet, Matthieu, Boukari, Hervé, Lhuillier, Emmanuel, Pala, Marco, Ouerghi, Abdelkarim
Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grow
Externí odkaz:
http://arxiv.org/abs/2201.09571
Autor:
Shyamapada Nandi, Asma Mansouri, Iurii Dovgaliuk, Philippe Boullay, Gilles Patriarche, Ieuan Cornu, Pierre Florian, Georges Mouchaham, Christian Serre
Publikováno v:
Communications Chemistry, Vol 6, Iss 1, Pp 1-9 (2023)
Abstract Al-based cationic metal-organic frameworks (MOFs) are uncommon. Here, we report a cationic Al-MOF, MIP-213(Al) ([Al18(μ 2-OH)24(OH2)12(mdip)6]6Cl·6H2O) constructed from flexible tetra-carboxylate ligand (5,5'-Methylenediisophthalic acid; H
Externí odkaz:
https://doaj.org/article/7c7858f5bba6496f85b3bf62fdf3404a
Autor:
Xue Li, Morgan Chandler, Yelixza I. Avila, Sandra I. Arroyo-Becker, Gilles Patriarche, Antonio Vargas-Berenguel, Juan M. Casas-Solvas, Kirill A. Afonin, Ruxandra Gref
Publikováno v:
International Journal of Pharmaceutics: X, Vol 5, Iss , Pp 100161- (2023)
Therapeutic nucleic acids (TNAs) are gaining increasing interest in the treatment of severe diseases including viral infections, inherited disorders, and cancers. However, the efficacy of intracellularly functioning TNAs is also reliant upon their de
Externí odkaz:
https://doaj.org/article/22f53b947c984b0f991421e77d9070bf
Autor:
Alexandre Heintz, Bouraoui Ilahi, Alexandre Pofelski, Gianluigi Botton, Gilles Patriarche, Andrea Barzaghi, Simon Fafard, Richard Arès, Giovanni Isella, Abderraouf Boucherif
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Many complex devices rely on epitaxial growth with high crystallinity and accurate composition. Here authors report epitaxial growth of Ge on deep etched porous Si pillars to provide a fully compliant substrate enabling elastic relaxation of defect f
Externí odkaz:
https://doaj.org/article/b0302eb751114196bc93e20db9171c4c
Autor:
Corentin Dabard, Victor Guilloux, Charlie Gréboval, Hong Po, Lina Makke, Ningyuan Fu, Xiang Zhen Xu, Mathieu G. Silly, Gilles Patriarche, Emmanuel Lhuillier, Thierry Barisien, Juan I. Climente, Benjamin T. Diroll, Sandrine Ithurria
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
Nanocrystals are desirable light sources for advanced display technologies. Here, the authors report on double-crowned 2D semiconductor nanoplatelets as light downconverters that offer both green and red emissions to achieve a wide color gamut.
Externí odkaz:
https://doaj.org/article/f1778f5382af4f5499d4b244cb9cadf7
Autor:
Binbin Wang, Emilie Sakat, Etienne Herth, Maksym Gromovyi, Andjelika Bjelajac, Julien Chaste, Gilles Patriarche, Philippe Boucaud, Frédéric Boeuf, Nicolas Pauc, Vincent Calvo, Jérémie Chrétien, Marvin Frauenrath, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a num
Externí odkaz:
https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a
Autor:
Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Abstract Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device
Externí odkaz:
https://doaj.org/article/bfb51b0b6b3648d6979cc29208c00b7b
Autor:
Youcef A. Bioud, Abderraouf Boucherif, Maksym Myronov, Ali Soltani, Gilles Patriarche, Nadi Braidy, Mourad Jellite, Dominique Drouin, Richard Arès
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-12 (2019)
The use of promising group III-V materials for optoelectronic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, the authors present an electrochemical deep etching strategy to drasti
Externí odkaz:
https://doaj.org/article/57278417d6d941dab4b3cabca1cba26b