Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Gill Yong Lee"'
Autor:
Ashish Pal, Gill Yong Lee, Bhuyan Bhaskar Jyoti, Amy Child, Gabriela Alva, David Hwang, Tomohiko Kitajima, Kang Sung-Kwan, Nancy Fung, Liu Jiang, Blessy Alexander, El Mehdi Bazizi, Chang Seok Kang, Buvna Ayyagari, Takehito Koshizawa
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
We demonstrate an integration scheme for a 3D NAND memory cell with non-replacement word line (WL) by investigating the cell characteristics, including program, erase, retention, and interference based on our in-house process and device flow of 3D NA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b6afe91e56692ed3f04e5aef02dc92c
https://doi.org/10.1109/imw51353.2021.9439599
https://doi.org/10.1109/imw51353.2021.9439599
Publikováno v:
2011 3rd IEEE International Memory Workshop (IMW).
The dramatic market demand for flash memory in the past decade has vigorously driven technology evolution. Traditional memory scaling is facing huge lithographic barriers resulting in the inevitable pursuit of non-planar solutions. In this paper, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9fc0da555c737164f0be786cb582602
https://doi.org/10.1109/imw.2011.5873195
https://doi.org/10.1109/imw.2011.5873195
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
This paper reviews the concept, status and challenges of emerging nonvolatile memory technologies. The technologies that are discussed and compared to state of the art flash technology are the conductive bridging RAM (CBRAM), the ferro-electric RAM (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::094b45fa377ad4ffaadff5db2a60f62f
https://doi.org/10.1109/iedm.2004.1419223
https://doi.org/10.1109/iedm.2004.1419223
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p567-570, 4p