Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Gilbert V. Shelden"'
Autor:
Donald W. Sweeney, Jan-Peter Urbach, Anton Barty, Gilbert V. Shelden, John S. Taylor, Russell M. Hudyma, Eberhard Spiller
Publikováno v:
SPIE Proceedings.
The high volume inspection equipment currently available to support development of EUV blanks is non-actinic. The same is anticipated for patterned EUV mask inspection. Once potential defects are identified and located by such non-actinic inspection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a393f416499cc88021296bec6641405
https://doi.org/10.1117/12.467918
https://doi.org/10.1117/12.467918
Autor:
Michael Penn, Moonsuk Yi, Cindy C. Larson, Alan R. Stivers, Eric M. Gulliksong, Barry Lieberman, Gilbert V. Shelden, Ted Liang, Paul B. Mirkarimi, Christopher C. Walton, James A. Folta
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) multilayer defects (phase defects) are a defect type unique to extreme ultraviolet lithography (EUVL) masks. A manufacturable inspection capability for these defects is key to the success of EUV lithography. Simulations of E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b047097e894a3e7f2a275a058f21268c
https://doi.org/10.1117/12.468199
https://doi.org/10.1117/12.468199
Autor:
Gilbert V. Shelden
Publikováno v:
SPIE Proceedings.
In 1992 the SIA published the first roadmap for semiconductors. Since then formal updates have been published in 1994, 1997, 1999 and now 2001. The 2001 ITRS update will not be published until Dec. 2001 so the tables in this document may change in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b7bb2fe229d8d9a26c6aac070987a72
https://doi.org/10.1117/12.479341
https://doi.org/10.1117/12.479341
Publikováno v:
SPIE Proceedings.
In this paper we will discuss the results obtained from five alternating aperture phase-shifting masks (altPSM), each with an identical layout but manufactured using a different technique. We will show the results obtained for mask CD performance mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1be2906cc3df1a4c4ab1751cc2ea9c03
https://doi.org/10.1117/12.435771
https://doi.org/10.1117/12.435771
Autor:
Gilbert V. Shelden
Publikováno v:
SPIE Proceedings.
Last year's first reduction ration workshop ended in a consensus to maintain mask magnification at 4X, presentations at the meeting centered on when the mask industry could be ready for the lOOnm and 70nm lithography nodes as defined in the ITRS. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db38ffb91b5a1057a2b089f28ac4460b
https://doi.org/10.1117/12.410757
https://doi.org/10.1117/12.410757
Publikováno v:
SPIE Proceedings.
Photomask technology remains one of the key enablers for the advancement of the semiconductor industry. Optical lithography will continue to be the mainstream technology for 0.25 micrometers and will likely extend below 0.2 micrometers . Continuous i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c57ddecd17733ea0594e25fafe33db
https://doi.org/10.1117/12.212801
https://doi.org/10.1117/12.212801
Autor:
Gilbert V. Shelden, John Canning
Publikováno v:
64-to 256-Megabit Reticle Generation: Technology Requirements and Approaches: A Critical Review.
As design rules shrink to meet the needs of advanced chips, the allocation of allowable errors between sources gets ever more critical. This paper will examine the error sources and budgets for current technologies and project the requirements for fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef76c84fc5ba568d967dde440babe7ac
https://doi.org/10.1117/12.177437
https://doi.org/10.1117/12.177437
Autor:
Gilbert V. Shelden, George L. Jones
Publikováno v:
Journal of Chemical Education. 46:320
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c6fb30472e5141cb1982e734f0ecde7
https://doi.org/10.1021/ed046p320
https://doi.org/10.1021/ed046p320