Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride

Autor: Shevitski, Brian, Gilbert, S. Matt, Chen, Christopher T., Kastl, Christoph, Barnard, Edward S., Wong, Ed, Ogletree, D. Frank, Watanabe, Kenji, Taniguchi, Takashi, Zettl, Alex, Aloni, Shaul

Publikováno v: Phys. Rev. B 100, 155419 (2019)

Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emis

Externí odkaz: http://arxiv.org/abs/1904.12107

Fabrication of Atomically Precise Nanopores in Hexagonal Boron Nitride

Autor: Gilbert, S. Matt, Dunn, Gabriel, Pham, Thang, Shevitski, Brian, Dimitrov, Edgar, Aloni, Shaul, Zettl, Alex

We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (hBN) with atomically precise control of the pore size. Previous methods of pore production in other 2D materials create pores of irregular geometry with imprecise diam

Externí odkaz: http://arxiv.org/abs/1702.01220

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Wafer-scale on-chip synthesis and field emission properties of vertically aligned boron nitride based nanofiber arrays

Autor: Long, Hu, Pham, Thang, Yan, Aiming, Guo, Zhen, Ishida, Hiroya, Shi, Wu, Turner, Sally, Gilbert, S Matt, Zettl, Alex

Publikováno v: Applied Physics Letters, vol 114, iss 9
Long, Hu; Pham, Thang; Yan, Aiming; Guo, Zhen; Ishida, Hiroya; Shi, Wu; et al.(2019). Wafer-scale on-chip synthesis and field emission properties of vertically aligned boron nitride based nanofiber arrays. Applied Physics Letters, 114(9), 093101-093101. doi: 10.1063/1.5079655. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/44m7w234

© 2019 Author(s). One dimensional boron nitride (BN) nanomaterials with a high aspect ratio are of great interest due to their unique properties and potential applications. However, BN nanomaterials are generally difficult to synthesize. Here, we de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::aaf5fe36430337c9fb010902dca4e360
https://escholarship.org/uc/item/44m7w234

Alternative Stacking Sequences in Hexagonal Boron Nitride

Autor: Gilbert, S Matt, Pham, Thang, Dogan, Mehmet, Oh, Sehoon, Shevitski, Brian, Schumm, Gabe, Liu, Stanley, Ercius, Peter, Aloni, Shaul, Cohen, Marvin L, Zettl, Alex

Publikováno v: Gilbert, SM; Pham, T; Dogan, M; Oh, S; Shevitski, B; Schumm, G; et al.(2018). Alternative Stacking Sequences in Hexagonal Boron Nitride. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/8m8391v4
2D Materials, vol 6, iss 2

The relative orientation of successive sheets, i.e. the stacking sequence, in layered two-dimensional materials is central to the electronic, thermal, and mechanical properties of the material. Often different stacking sequences have comparable cohes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09da8356e7c1373809e17196bb15629b