Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Gil Yong Chung"'
Publikováno v:
Materials Science Forum. 963:119-122
Epilayers grown on substrates etched by various etching conditions were studied for stacking fault defects. Substrates were etched by H2, H2+ HCl and H2 + CxHy gases prior to epilayer growth for comparison. High density of SF was observed in the epil
Publikováno v:
Materials Science Forum. 963:530-533
The impact of surface stress due to polish and grind processes on wafer bow was studied as a function of abrasive size. Results indicate that sub-surface damage from these processes can introduce significant surface stress. For polishing processes, t
Autor:
Tuerxun Ailihumaer, Edward K. Sanchez, Michael Dudley, Gil Yong Chung, Ouloide Yannick Goue, Balaji Raghothamachar, Ian Manning, Jianqiu Guo
Publikováno v:
Materials Science Forum. 963:60-63
Shifts in the spatial distribution of threading dislocations in 150 mm 4H SiC wafers were examined as a response to intentional changes in both the flow of the nitrogen source gas used to control resistivity during bulk crystal growth, and the growth
Autor:
Ouloide Yannick Goue, Balaji Raghothamachar, Michael Dudley, Ian Manning, Jianqiu Guo, Yu Yang, Gil Yong Chung, Edward Sanchez
Publikováno v:
Materials Science Forum. 924:11-14
Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stack
Autor:
Jeff Quast, Ouloide Yannick Goue, Balaji Raghothamachar, Gil Yong Chung, Darren Hansen, Yu Yang, Ian Manning, Jianqiu Guo, Edward Sanchez, Michael Dudley
Publikováno v:
Journal of Crystal Growth. 452:35-38
We recently reported on the formation of overlapping rhombus-shaped stacking faults from scratches left over by the chemical mechanical polishing during high temperature annealing of PVT-grown 4H–SiC wafer. These stacking faults are restricted to r
Autor:
Darren Hansen, Gil Yong Chung, Yu Yang, Jeffrey Quast, Michael Dudley, Ian Manning, Jianqiu Guo, Edward Sanchez, Ouloide Yannick Goue, Balaji Raghothamachar
Publikováno v:
Materials Science Forum. 858:105-108
Synchrotron white beam X-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of h
Autor:
Jeffrey Quast, Ian Manning, Christopher Parfeniuk, Victor Torres, Kevin Moeggenborg, Bernd Thomas, Gil Yong Chung, Edward Sanchez, Jie Zhang, Daniel Adams, Clinton Whiteley, Darren Hansen
Publikováno v:
Materials Science Forum. 858:11-14
Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality improvements, such that key metrics match or outperform 100 mm substrates. Total dislocation densities and threadin
Autor:
Jie Zhang, Willie Bowen, Bernd Thomas, Daniel Adams, Gil Yong Chung, Victor Torres, Edward Sanchez, Darren Hansen
Publikováno v:
Materials Science Forum. 858:129-132
In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a warm-wall multi-wafer CVD system (Aixtron VP2800WW). Statistical data on doping and thickness of 25 μm to 40 μm layer growth show
Autor:
Jeff Quast, Gil Yong Chung, Ouloide Yannick Goue, Balaji Raghothamachar, Michael Dudley, Yu Yang, Edward Sanchez, Ian Manning, Jianqiu Guo, Darren Hansen
Publikováno v:
Journal of Electronic Materials. 45:2066-2070
Synchrotron white beam x-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of h
Autor:
Eric A. Stach, Fangzhen Wu, Gil Yong Chung, Balaji Raghothamachar, Kim Kisslinger, Yu Yang, Michael Dudley, Huanhuan Wang, Mark J. Loboda, Dong Su, Stephan G. Mueller, Li Hua Zhang, Edward K. Sanchez, Darren Hansen, Jianqiu Guo
Publikováno v:
Materials Science Forum. :85-89
Synchrotron white beam x-ray topography (SWBXT), synchrotron monochromatic beam x-ray topography (SMBXT), and high resolution transmission electron microscopy (HRTEM) studies have been carried out on stacking faults in PVT grown 4H-SiC crystal. Their