Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Gil Wong Choi"'
Autor:
Sanghoon Kim, Ho-Sang Kwon, Byoung-Chul Jun, Gil-Wong Choi, Jong-Hun Jung, Sang Min Lee, Ho-Yeun Lee, Pyung-Soon Im, Dong-Wook Kim
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 31:584-587
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::044d203e2610e508541997e86a23b6da
https://doi.org/10.5515/kjkiees.2020.31.7.584
https://doi.org/10.5515/kjkiees.2020.31.7.584
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 31:43-50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2ef411fb4a6bbad6aa84d9ce4bc0b07
https://doi.org/10.5515/kjkiees.2020.31.1.43
https://doi.org/10.5515/kjkiees.2020.31.1.43
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 26:540-545
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9efdd39424aefc59aac32efde4c71e40
https://doi.org/10.5515/kjkiees.2015.26.6.540
https://doi.org/10.5515/kjkiees.2015.26.6.540
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 26:165-170
In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e610f1e5cb8d9895ae7fe7179882cbb3
https://doi.org/10.5515/kjkiees.2015.26.2.165
https://doi.org/10.5515/kjkiees.2015.26.2.165
Autor:
Hyoung-Joo Kim, Dong-Seok Kim, Byeong-Ok Lim, Bok-Hyung Lee, Chul-Ho Won, Ryun-Hwi Kim, Gil-Wong Choi, Jung-Hee Lee, In-Pyo Hong
Publikováno v:
Journal of Crystal Growth. 395:5-8
AlGaN/GaN heterostructure was grown on semi-insulating 6H–SiC substrate. The effect of the thickness of the initial AlN buffer layer on the crystalline quality and the stress of the grown GaN layer were investigated. The semi-insulating characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b713f981da82c4077988ca716de120b8
https://doi.org/10.1016/j.jcrysgro.2014.02.046
https://doi.org/10.1016/j.jcrysgro.2014.02.046
Autor:
Jin-Joo Choi, Sang-Hoon Kim, Hyoung-Joo Kim, Dong-Hwan Kim, Gil-Wong Choi, Bok-Hyoung Lee, Seon-Joo Kim
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 24:394-402
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfec85eff7ad13b47dc5342fc9498a27
https://doi.org/10.5515/kjkiees.2013.24.4.394
https://doi.org/10.5515/kjkiees.2013.24.4.394
Autor:
Ryun-Hwi Kim, Hyoung-Joo Kim, Gil-Wong Choi, Ki-Sik Im, Jung-Hee Lee, Byeong-Ok Lim, Jongmin Lee, Bok-Hyung Lee, Jung Soo Lee, Sang-Il Kim
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 24:128-135
This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d99c8ad844e1fecf392a8e54d32602d0
https://doi.org/10.5515/kjkiees.2013.24.2.128
https://doi.org/10.5515/kjkiees.2013.24.2.128
Autor:
Frank Francisco, David Smith, Heather Song, Peter H. Stoltz, Jin Joo Choi, Ming-Chieh Lin, Gil Wong Choi, Leslie Tekamp
Publikováno v:
Journal of Electromagnetic Analysis and Applications. :96-102
A new class of compact and lightweight S-band 1 kW traveling-wave tube (TWT) is being developed for a microwave power module (MPM) that will be used for phased antenna array radar applications. The proposed S-band MPM provides a tenfold peak power in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d276e540d3e385e0cc5c450897471d7b
https://doi.org/10.4236/jemaa.2013.53016
https://doi.org/10.4236/jemaa.2013.53016
Publikováno v:
Journal of the Korea Institute of Military Science and Technology. 14:509-516
In this paper, a ground penetrating radar(GPR) system is implemented for landmine detection. The performance of the GPR system is associated with the characteristics of local soil and buried target. The choice of the center frequency and the bandwidt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82e7c55d3a3c1c5ff4be9111f0ae5e70
https://doi.org/10.9766/kimst.2011.14.3.509
https://doi.org/10.9766/kimst.2011.14.3.509
Publikováno v:
Electronics Letters. 49:1013-1015
A surface passivation technique of high electron mobility transistor (HEMT) devices is reported. The passivated HEMT device has a much higher RF performance of FT and F max than a non-passivated one. The AlGaN/GaN HEMT has a short gate length of 0.15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51efa66754200581f4c4e1f3d57327c3
https://doi.org/10.1049/el.2013.1211
https://doi.org/10.1049/el.2013.1211