Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Gil Sheleg"'
Autor:
Gil Sheleg, Nir Tessler
Publikováno v:
IEEE Transactions on Electron Devices. 69:555-560
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d61e123295ffeb5bf299c07c38494ae
https://doi.org/10.1109/ted.2021.3138361
https://doi.org/10.1109/ted.2021.3138361
Publikováno v:
ACS Applied Materials & Interfaces
We report an optoelectronic device consisting of a solution-processed indium gallium zinc oxide (IGZO) thin-film transistor and vacuum-deposited small organic molecules. Depending on the configurations of the organic materials, either bulk heterojunc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fb8617e8cc57fb9b3cdc18b2c60e699
https://doi.org/10.1021/acsami.9b22165
https://doi.org/10.1021/acsami.9b22165
Autor:
Nir Tessler, Gil Sheleg
We propose and demonstrate self-aligned Double Injection Function Thin Film Transistor (DIF-TFT) architecture that mitigates short channel effects in 200nm channel on a non-scaled insulator (100nm SiO2). In this conceptual design, a combination of an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a4c246c3772345df18276e40b669ddc
https://doi.org/10.21203/rs.3.rs-899178/v1
https://doi.org/10.21203/rs.3.rs-899178/v1
Autor:
Gil Sheleg, Nir Tessler
Publikováno v:
Applied Physics Letters. 120:253504
Metal oxide-based electronics is advancing rapidly where the reduced dimensions require transistor structures different to conventional CPUs. The double injection function transistor (DIFT) is a type of a source-controlled transistor. As doping is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9168ad9b8af4c35f77d67ad3e8fb6618
https://doi.org/10.1063/5.0094334
https://doi.org/10.1063/5.0094334
Autor:
Gil Sheleg, Nir Tessler
Publikováno v:
Organic and Hybrid Field-Effect Transistors XIX.
Here we report a Vertical Hybrid Field Effect Transistor (VHFET) that shows an improved saturated output characteristics. Up till today the injection limited regime in vertical transistor was realized using an injection barrier as well as a buried se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e582949ed8023bcea6b2b0cd5b8099d
https://doi.org/10.1117/12.2570138
https://doi.org/10.1117/12.2570138
Autor:
Christopher M. Ashcroft, Come Bodart-Le Guen, Filippo Campana, Fabio Cicoira, Jacqueline M. Cole, Jennifer Dailey, Carsten Deibel, Eitan Ehrenfreund, Kyle Frohna, Michael A. Fusella, Jun Gao, Malte C. Gather, Katelyn P. Goetz, Arko Graf, Peter Günter, Katherina Haase, Mike Hambsch, Hannes Hase, Tatsuo Hasegawa, Michael C. Heiber, Anna I. Hofmann, Shiyu Hu, Hyun-June Jang, Mojca Jazbinsek, Oana D. Jurchescu, Hiroshi Kageyama, Howard E. Katz, Changmin Keum, Tom Kitto, Renee Kroon, Oliver Kühn, Hui Li, YunHui L. Lin, Björn Lüssem, Stefan C.B. Mannsfeld, Assunta Marrocchi, Kathryn Mayer, Christian Müller, Tho Duc Nguyen, Deirdre M. O’Carroll, Michael C. Petty, Barry P. Rand, Sebastian Reineke, Nicolo Rossetti, Ingo Salzmann, Victoria Savikhin, Daniele Sciosci, Valerii Sharapov, Gil Sheleg, Wei Shi, Yasuhiko Shirota, Jian Song, Samuel D. Stranks, Cecilia Teixeira da Rocha, Nir Tessler, Michael F. Toney, Valeria Trombettoni, Laura Tropf, Ayse Turak, Luigi Vaccaro, Zeev Valy Vardeny, Alexander Wagenpfahl, Paul-Anton Will, Katherine Willets, Junsheng Yu, Jana Zaumseil, Jakob Zessin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b28e18b42fcba043fd2706db5e5fff4
https://doi.org/10.1016/b978-0-08-102284-9.09992-7
https://doi.org/10.1016/b978-0-08-102284-9.09992-7
Autor:
Karl D. Stephan, Gil Sheleg
Publikováno v:
IEEE Transactions on Plasma Science. 43:501-505
A type of plasma discharge that propagates along the surface of a resistive barrier composed of an electrolyte in water is described. Electric fields parallel to the surface appear to steer the discharge in the direction of a submerged anode to produ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b96e134c958ad47d346486966ca1dd45
https://doi.org/10.1109/tps.2014.2377796
https://doi.org/10.1109/tps.2014.2377796
Publikováno v:
Journal of Applied Physics. 122:195502
The reported Vertical Organic Field Effect Transistors (VOFETs) show either superior current and switching speeds or well-behaved transistor performance, especially saturation in the output characteristics. Through the study of the relationship betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482ac6e0923a52823997a8be71bf3d35
https://doi.org/10.1063/1.5005800
https://doi.org/10.1063/1.5005800
Publikováno v:
Journal of Applied Physics. 121:204503
Like most of the vertical transistors, the Patterned Source Vertical Organic Field Effect Transistor (PS-VOFET) does not exhibit saturation in the output characteristics. The importance of achieving a good saturation is demonstrated in a vertical org
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1780fe51a188abf789d640d21b291794
https://doi.org/10.1063/1.4984053
https://doi.org/10.1063/1.4984053